Reliability aspects of copper metallization and interconnect technology for power devices

Hille, F.; Roth, R.; Schäffer, C.; Schulze, H.; Heuck, N.; Bolowski, Daniel; Guth, Karsten; Ciliox, A.; Rott, Karina; Umbach, Frank; Kerber, M.

doi:10.1016/j.microrel.2016.07.119

Cited by 13 publications

(3 citation statements)

References 4 publications

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“…Silver sintered dies led to an increase in short current energy by 11% as compared to SnAg3.5 solder of 100 µm as shown in [78]. While in [80], silver sintering or diffusion soldering leads to increase in critical short circuit energy by 20-25%. When metallization is accompanied by silver sintering at the back instead of soldering, it leads to an of increment 85% of short circuit critical energy [80].…”

Section: Die Attachmentioning

confidence: 97%

“…The metallization also provides room for OC and short-circuit energy capability by providing a considerable heat capacity. In [80] for a 1200 V IGBT, changing a thin Al metallization to a thick Cu metallization alone at the top side of the die leads to an increase of 20-25% of the short circuit energy. Another modified metallization is introduced in [78].…”

Section: Chip Metallizationmentioning

confidence: 99%

“…While in [80], silver sintering or diffusion soldering leads to increase in critical short circuit energy by 20-25%. When metallization is accompanied by silver sintering at the back instead of soldering, it leads to an of increment 85% of short circuit critical energy [80]. Silver sintering has been applied in SKiNTER Technology of Semikron Power Modules which can support its operation as high as its melting point without aging drastically [89], [90].…”

Section: Die Attachmentioning

confidence: 99%

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Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Bhadoria

Dijkhuizen

Raj

et al. 2023

IEEE Trans. Power Electron.

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With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technologies for the over-current performance of SiC power modules in power electronics converters. It presents the limitations produced at the power module level by packaging materials which include semiconductor chips, substrates, metallization, bonding techniques, die attach, and encapsulation materials. Specifically, technologies for over-current related temperatures in excess of 200 • C are discussed. The paper also discusses potential technologies which have been proven or may be potential candidates for improving the safe operating area. The discussed technologies are use of phase change materials below the semiconductor chip, Peltier elements, new layouts of the power modules, control and modulation techniques for converters. Special attention has been given to an overview of various potential phase change materials which can be considered for high-temperature operations.

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Section: Die Attachmentioning

confidence: 97%

Section: Chip Metallizationmentioning

confidence: 99%