Reliability Assessment of InAlN/GaN HFETs With Lifetime $8.9\times 10^{\mathrm {6}}$ h

Wang, Yuangang; Song, Xubo; Lei, Chi; Yin, Jun; Zhou, Xingye; Fang, Yulong; Tan, Xin; Guo, Huajun; Peng, Hao; Gu, Guodong; Feng, Zhihong; Cai, Shujun

doi:10.1109/led.2017.2679045

Cited by 8 publications

(10 citation statements)

References 14 publications

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“…The values of f T and f max in the published InAlN/GaN HFETs from other research teams are shown in Fig. 3 b [4–6]. The obtained value of f max (405 GHz) is found to a recorded result in the reported InAlN/GaN HFETs.…”

Section: Device Performancesupporting

confidence: 60%

“…The lattice‐matched InAlN/GaN heterostructures with strong spontaneous polarisation can also generate high electron density with only several‐nanometre thin barrier layer, which can overcome the SCEs and achieve high frequency [4]. Moreover, at a junction temperature of 150°C, the median time to failure of InAlN/GaN HFETs have been evaluated to be 8.9 × 10 6 h [5], indicating that InAlN/GaN‐based devices are reliable and could be putted to use in future practical utilisation. In recent years, there have made a great step in the RF properties for InAlN/GaN HFETs.…”

Section: Introductionmentioning

confidence: 99%

“…In this Letter, InAlN/GaN HFETs with high f max are fabricated on the same material, which has been proved to be reliable and stable [5]. In the InAlN/GaN heterostructure, a 3 nm GaN cap layer is introduced to reduce the electron density and suppress the SCEs.…”

Section: Introductionmentioning

confidence: 99%

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High‐frequency InAlN/GaN HFET with f _max over 400 GHz

Lv²,

Zhang

et al. 2018

Electron. lett.

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Ultra-thin InAlN/GaN heterostructure field-effect transistors (HFETs) having high maximum oscillation frequency (f max) are fabricated by scaling lateral dimensions. A 3 nm GaN cap layer is adopted to reduce the electron density and suppress the short-channel effects. Non-alloyed regrown n +-GaN ohmic contacts with total ohmic resistance (R tot) of 0.13 Ω.mm is also introduced into the device, in which the virtual source-to-drain distance is 600 nm. T-shaped gate with 40 nm length is formed in the centre of the source-to-drain region by self-aligned e-beam lithography. The peak extrinsic transconductance (g m) reaches 956 mS/mm. Most of all, a high f max of 405 GHz is obtained, which is the highest value among the reported InAlN/GaN HFETs. These obtained results mean that the InAlN/GaN HFETs having reliability should be still suitable for G-band (140-220 GHz) power-amplifier application with further optimisation.

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Section: Device Performancesupporting

confidence: 60%

Section: Introductionmentioning

confidence: 99%

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High‐frequency InAlN/GaN HFET with f _max over 400 GHz

Lv²,

Zhang

et al. 2018

Electron. lett.

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“…Comparing with the mature AlGaN/GaN heterostructure, AlInN/GaN system has also attracted much attention. The AlInN/GaN heterostructure can be strain free and address better reliability than the conventional AlGaN/GaN devices [4]. Additionally, due to the strong polarization in the AlInN layer, the AlInN/GaN HEMT always has higher 2DEG density and thinner barrier, leading to higher output power, transconductance and cut-off frequency [5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

Zhou

Dai

et al. 2021

Micro & Nano Letters

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An AlInN/GaN superjunction fin-gate high electron mobility transistor (SJFin-HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two-dimensional-hole-gas/twodimensional-electron-gas/two-dimensional-hole-gas/two-dimensional-electron-gas (2DHG/2DEG/2DHG/2DEG) are respectively induced due to the polarization charges at the heterojunction interfaces. The 2DHGs and 2DEGs compensate each other, resulting a charge balanced superjunction in the gate-drain spacing, thus inducing a uniform electric field distribution under off-state maximizing the breakdown voltage. Additionally, because the current flows through both the 2DEGs, higher output current and lower on-state resistance are observed in contrast to the conventional Fin-HEMT. Simulation results show breakdown voltage of 2957 V (V GS = -6 V) and on-state resistance of 0.31 mΩ⋅cm 2 (V DS = 0.1 V, V GS = 0 V) for the SJFin-HEMT, comparing with that of 241 V and 0.36 mΩ⋅cm 2 for the conventional Fin-HEMT.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…Particularly, when the In content reaches 0.18, the lattice constant of InAlN equals that of GaN, enabling the achievement of lattice-matched InAlN/GaN heterostructures, thereby avoiding the degradation of high-electron-mobility transistor (HEMT) device performance caused by the inverse piezoelectric effect. [3,4] The higher 2DEG density of InAlN/GaN heterostructures allows HEMT devices to achieve higher output power, however, it may also result in the migration of more electrons from the lowest subband to higher subbands. SdH lowtemperature measurements of InAlN/GaN heterostructures have demonstrated that the 2DEG density of subband 2 exceeds 5% of the total 2DEG density at 0.28 K. [5] As the temperature increases, the proportion of electrons occupying higher subbands steadily increases.Polar optical phonon (POP) scattering is the dominant scattering mechanism in 2DEG in GaN-based heterostructures at temperatures above 200 K. [6,7] Only the phonons around the Brillouin-zone center contribute to electron scattering to satisfy momentum conservation.…”

mentioning

confidence: 99%

Multi‐Subband Polar Optical Phonon Scattering in InAlN/AlN/GaN Heterostructures

Zhang

et al. 2023

Physica Rapid Research Ltrs

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The high density of two‐dimensional electron gas (2DEG) in InAlN/AlN/GaN heterostructures results in significant occupation of higher subbands, it is thus imperative to consider multi‐subband occupation and inter‐subband scattering in the calculations of polar optical phonon (POP) scattering. The physical parameters, such as subband energies, wave functions of the four lowest subbands, and Fermi level of InAlN/AlN/GaN heterostructures, are calculated by solving the Schrödinger‐Poisson equations and applied to the multi‐subband POP scattering model. The dependence of mobility, which is limited by multi‐subband POP scattering, on temperature and 2DEG density is studied. The results show that multi‐subband occupation and inter‐subband scattering play important roles in electron transport. The higher subbands contribute 26% to room‐temperature electron mobility. Two simplified POP scattering models, which either ignore multi‐subband occupation or simplify the in‐scattering processes are evaluated. The results show that both simplified models introduce significant deviations in the mobilities that are limited by POP scattering. The relative magnitudes of mobility in each subband depend on the energy dependence of momentum relaxation time and the energy distribution of each subband.This article is protected by copyright. All rights reserved.

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Reliability Assessment of InAlN/GaN HFETs With Lifetime $8.9\times 10^{\mathrm {6}}$ h

Cited by 8 publications

References 14 publications

High‐frequency InAlN/GaN HFET with f _max over 400 GHz

High‐frequency InAlN/GaN HFET with f _max over 400 GHz

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

Multi‐Subband Polar Optical Phonon Scattering in InAlN/AlN/GaN Heterostructures

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Reliability Assessment of InAlN/GaN HFETs With Lifetime $8.9\times 10^{\mathrm {6}}$ h

Cited by 8 publications

References 14 publications

High‐frequency InAlN/GaN HFET with f max over 400 GHz

High‐frequency InAlN/GaN HFET with f max over 400 GHz

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

Multi‐Subband Polar Optical Phonon Scattering in InAlN/AlN/GaN Heterostructures

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High‐frequency InAlN/GaN HFET with f _max over 400 GHz

High‐frequency InAlN/GaN HFET with f _max over 400 GHz