Reliability-Aware Design Space Exploration for Fully Integrated RF CMOS PA

Pazos, Sebastián; Aguirre, Fernando; Palumbo, F.; Silveira, Fernando

doi:10.1109/tdmr.2019.2957489

Cited by 7 publications

(4 citation statements)

References 45 publications

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“…According to Equation ( 3 ), this is indicative of a decrease in the carrier mobility

. While this aging effect on the mobility is well-known and reported in the literature [ 3 , 8 , 10 ], attention is often focused on the threshold voltage for degradation alone [ 9 , 30 , 31 ].…”

Section: Aging Monitoring and Compensationmentioning

confidence: 99%

Aging Compensation in a Class-A High-Frequency Amplifier with DC Temperature Measurements

Altet

Aragones

Barajas

et al. 2023

Sensors

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One of the threats to nanometric CMOS analog circuit reliability is circuit performance degradation due to transistor aging. To extend circuit operating life, the bias of the main devices within the circuit must be adjusted while the aging degradation process affects them by using a monitor circuit that tracks the evolution of the circuit performance. In this paper, we propose the use of DC temperature measurements in the proximity of the circuit to perform the monitoring of circuit performance degradation and as an observable variable to adjust the bias of the main devices to restore the degraded performance to the original values. To this end, we present experimental results obtained from nine samples of a standard CMOS integrated circuit containing a high-frequency class-A power amplifier and a differential temperature sensor. After accelerated aging, the gain of the amplifier is degraded up to 50%. We propose two different procedures to perform DC temperature measurements that allow tracking of the amplifier gain degradation due to aging and, by uniquely observing temperature readings, automatically set a new bias for the amplifier devices that restores the original amplifier gain. Whereas one of the procedures is able to restore the gain up to a certain limit, the second allows full gain restoration.

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“…According to Equation ( 3 ), this is indicative of a decrease in the carrier mobility

. While this aging effect on the mobility is well-known and reported in the literature [ 3 , 8 , 10 ], attention is often focused on the threshold voltage for degradation alone [ 9 , 30 , 31 ].…”

Section: Aging Monitoring and Compensationmentioning

confidence: 99%

Aging Compensation in a Class-A High-Frequency Amplifier with DC Temperature Measurements

Altet

Aragones

Barajas

et al. 2023

Sensors

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“…Esto puede cuantificarse en etapas de diseño como se demostró en la Ref. (Sebastian Pazos et al, 2019). Entonces, se propone una metodología de polarización en lazo cerrado que compense la degradación paramétrica del dispositivo activo durante la vida útil del PA, garantizando una menor pérdida de potencia de salida por envejecimiento del transistor.…”

Section: Confiabilidad En Amplificadores Monolíticos De Radiofrecuenciaunclassified

“…M. Pazos, Aguirre, Tang, et al, 2018;S.M. Pazos, Aguirre, Palumbo, et al, 2018;Sebastian Pazos et al, 2019;Sebastián Matías Pazos et al, 2020) y demás publicaciones del grupo de trabajo del Laboratorio de Nanoelectrónica de la UIDI-CONICET UTN.BA.…”

Section: Introductionunclassified

Desafíos de confiabilidad en dispositivos y circuitos nano-electrónicos de radiofrecuencia

Pazos

Palumbo²,

Silveira³

2020

AJEA

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Las tecnologías de integración de circuitos nanoelectrónicos basadas en silicio se acercan al límite de su evolución. La introducción de nuevos materiales para los dispositivos de efecto de campo, incluyendo óxidos de alta constante dieléctrica y semiconductores de alta movilidad, presenta enorme potencial para la próxima generación de componentes nanoelectrónicos, en donde uno de los principales desafíos a afrontar es su confiabilidad. A su vez, el impacto de la degradación de los óxidos delgados a nivel de circuitos complejos cobra gran importancia a medida que las aplicaciones se vuelven más complejas y sus condiciones de trabajo más exigentes. En este trabajo se presenta una recolección de algunos resultados obtenidos en el área de confiabilidad con una visión integral del problema, proponiendo explicaciones físicas de la degradación en dispositivos nanoelectrónicos novedosos y generando estrategias para garantizar el desempeño de circuitos de radiofrecuencia frente al envejecimiento.

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“…The first one is known as an on-state condition, whereas the second is referred to as either an offstate or non-conducting (nc) condition [15,16]. In general terms, degradation mechanisms occurring under these two conditions are relevant in current applications, but analyzing those becoming apparent for the nc state is of particular importance when studying the reliability aspects of PAs [17,18]. This serves as a motivation to carry out TDDB analyses considering off-state operation.…”

Section: Introductionmentioning

confidence: 99%

RC-Effects on the Oxide of SOI MOSFET under Off-State TDDB Degradation: RF Characterization and Modeling

Otero-Carrascal,

Chaparro-Ortiz,

Srinivasan

et al. 2024

Micromachines

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Based on S-parameter measurements, the effect of dynamic trapping and de-trapping of charge in the gate oxide, the increase of dielectric loss due to polarization, and the impact of leakage current on the small-signal input impedance at RF is analyzed and represented. This is achieved by systematically extracting the corresponding model parameters from single device measurements at different frequency ranges, and then the methodology is applied to analyze the evolution of these parameters when the device is submitted to non-conducting electrical stress. This approach not only allows to inspect the impact of effects not occurring under DC conditions, such as the current due to the time varying dielectric polarization, but also to clearly distinguish effects in accordance with the functional form of their contribution to the device’s impedance. In fact, it is shown that minor changes in the model of the gate capacitance by including additional resistive and capacitive components allows for an excellent model-experiment correlation up to 30 GHz. Moreover, the accuracy of the correlation is shown to be maintained when applying the proposal to the device under different gate-to-source bias conditions and at several stages during off-state degradation.

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Reliability-Aware Design Space Exploration for Fully Integrated RF CMOS PA

Cited by 7 publications

References 45 publications

Aging Compensation in a Class-A High-Frequency Amplifier with DC Temperature Measurements

Aging Compensation in a Class-A High-Frequency Amplifier with DC Temperature Measurements

Desafíos de confiabilidad en dispositivos y circuitos nano-electrónicos de radiofrecuencia

RC-Effects on the Oxide of SOI MOSFET under Off-State TDDB Degradation: RF Characterization and Modeling

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