Reliability challenges of high performance PD SOI CMOS with ultra-thin gate dielectrics

Zhao, E.; Zhang, Junyi; Salman, Akram; Subba, N.; Chan, J.; Marathe, A.; Beebe, S.; Taylor, K.

doi:10.1016/j.sse.2004.05.003

Cited by 17 publications

(7 citation statements)

References 13 publications

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“…The achievable function of the process is mostly due to the good conformality (step coverage) of chemical vapor deposition, in which SiH4 (silane) is controlled at a chosen flow rate and the ambient is sustained at an appropriate temperature and at certain pressure to achieve a good deposition rate in kinetic regime. [7][8][9][10][11][12][13][14][15] Somehow, the electrical performances of transistors are mainly manifested in current-versusvoltage characteristic curves. Those curves are necessarily parameter-extracted in the model, which is useful to develop circuit design.…”

Section: Introductionmentioning

confidence: 99%

Conclusive Algorithm with Kink Effects for Fitting 3-D FinFET and Planar MOSFET Characteristic Curves

Yang,

Chi,

Yang

et al. 2024

Preprint

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NFinFET transistors with fin channel length 90nm and a planar MOSFET transistor with channel length 180nm and 90nm are presented with characteristic curves at various gate biases. A finalized algorithm with kink effects is effectively responsible for addressing the field effect transistors. The algorithm includes the modified conventional current-voltage formula and a nonlinear heat-associated kink solution which is simplified as a Gaussian form. Three parameters in modified model includes kN (related with channel width, channel length, and gate oxide capacitor, and proportional to the mobility of carriers)Vth(Threshold Voltage), and (the inverse of Early Voltage). Those parameters are determined to minimize the discrepancies between the measured data and the fitting values, but leave kinks located at around (VGS－Vth), which are deliberately eliminated by the Gaussian form because of the agitation of thermal kink effects. The whole fitting is made to be as close as the as-measured IDS-VDS. In the mean time, those determined parameters are physically meaningful after the analysis has been done.

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Section: Introductionmentioning

confidence: 99%

Conclusive Algorithm with Kink Effects for Fitting 3-D FinFET and Planar MOSFET Characteristic Curves

Yang,

Chi,

Yang

et al. 2024

Preprint

View full text Add to dashboard Cite

show abstract

“…Therefore, current-versus-voltage characteristic curves showing the electrical performances of transistors are necessarily parameter-extracted in the model. Nevertheless, researchers are still intrigued to know if the "modified" conventional formula is applicable for fitting repeated characteristic curves [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Useful parameters are supposed to be constants in the model, even though they need interpreting.…”

Section: Introductionmentioning

confidence: 99%

Conclusive Model-Fit Current–Voltage Characteristic Curves with Kink Effects

Yang,

Chi

2023

Applied Sciences

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Current–voltage characteristic curves of NFinFET are presented and fitted with modified current–voltage (I-V) formulas, where the modified term in the triode region is demonstrated to be indispensable. In the as-known I-V formula, important parameters need to be determined to make both the measured data and the fitting data as close as possible. These parameters include kN (associated with the sizes of the transistor and mobility), λ (associated with early voltage), and Vth (the threshold voltage). The differences between the measured data and the fitting data vary with the applied source–drain bias, proving that the mobility of the carriers is not consistently constant. On the other hand, a modified formula, called the kink effect factor, is negatively or positively added, simulating solitary heat waves or lattice vibration, which disturb the propagation of carriers and thus influence the source–drain current (IDS). The new statistical standard deviations (δ) are then found to be effectively suppressed as the kink effect is taken into account.

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“…On the other hand, the mobility of silicon channel may be promoted by even 2.5 to 4 times as SiGe is technically and sophisticatedly introduced stack by stack. The above advanced techniques and other options are definitely promising and achievable, making FinFET continuously popular as currently [6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Process Corresponding Implications Associated with a Conclusive Model-Fit Current-Voltage Characteristic Curves

Yang

Chi

2022

Applied Sciences

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NFinFET transistors with various fin widths (110 nm, 115 nm, and 120 nm) are put into measurements, and the data are collected. By using the modified model, the measure data is fitted. Several parameters in the formula of modified model are determined to make both the measured data and the fitting data almost as close as possible. Those parameters are listed and analyzed, including kN (proportional to channel width and gate oxide capacitor, and inversely proportional to the channel length) λ (the inverse of Early Voltage), and sometimes Vth (Threshold Voltage). By kN, the appropriate process control can be high lighted, the corresponding channel concentration can be calculated and thus many implicit physical quantities may be exploited.

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Reliability challenges of high performance PD SOI CMOS with ultra-thin gate dielectrics

Cited by 17 publications

References 13 publications

Conclusive Algorithm with Kink Effects for Fitting 3-D FinFET and Planar MOSFET Characteristic Curves

Conclusive Algorithm with Kink Effects for Fitting 3-D FinFET and Planar MOSFET Characteristic Curves

Conclusive Model-Fit Current–Voltage Characteristic Curves with Kink Effects

Process Corresponding Implications Associated with a Conclusive Model-Fit Current-Voltage Characteristic Curves

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