Reliability characterisation of plasma induced charging damage (PID) for MOS transistors of a silicon on insulator (SOI) process using product relevant test structures and fWLR methods

Martin, Andreas; Kamp, Angelika; Berger, Johannes

doi:10.1109/iirw53245.2021.9635611

2021 IEEE International Integrated Reliability Workshop (IIRW) 2021

DOI: 10.1109/iirw53245.2021.9635611

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Reliability characterisation of plasma induced charging damage (PID) for MOS transistors of a silicon on insulator (SOI) process using product relevant test structures and fWLR methods

Andreas Martin

Angelika Kamp

Johannes Berger

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Reliability characterisation of plasma induced charging damage (PID) for MOS transistors of a silicon on insulator (SOI) process using product relevant test structures and fWLR methods

Cited by 1 publication

References 23 publications

Modeling Plasma-Induced Damage During the Dry Etching of Silicon

Modeling Plasma-Induced Damage During the Dry Etching of Silicon

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