2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) 2014
DOI: 10.1109/iirw.2014.7049528
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Reliability characterization of a commercial TaO<inf>x</inf>-based ReRAM

Abstract: We present results of endurance and retention characterization for one of the first commercially available TaO X -based resistive memory chip in room and higher temperature environments. Data retention of the memory chip shows activation energy of 1.13eV and demonstrates an 85°C 10year data retention even after 250,000 programming cycles. The combined program and read errors were in the range of 10 -7 to 10 -5 and the memory chip withstood 10 6 program cycles at 125°C. Overall, the reliability of this commerci… Show more

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Cited by 5 publications
(3 citation statements)
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“…Indeed, the works presented so far are based either on simulations or on real device data, or on memristive chips interfaced with some standard digital hardware. Despite integration of CMOS technology has been demonstrated for non-volatile resistive switching devices already at a commercial level (Yang-Scharlotta et al, 2014 ; Hayakawa et al, 2015 ), the design of co-integrated memristive-based neuromorphic processors is still under development. We envisage a three-phase process to achieve a fully integrated system.…”
Section: Memristive Devices and Computingmentioning
confidence: 99%
“…Indeed, the works presented so far are based either on simulations or on real device data, or on memristive chips interfaced with some standard digital hardware. Despite integration of CMOS technology has been demonstrated for non-volatile resistive switching devices already at a commercial level (Yang-Scharlotta et al, 2014 ; Hayakawa et al, 2015 ), the design of co-integrated memristive-based neuromorphic processors is still under development. We envisage a three-phase process to achieve a fully integrated system.…”
Section: Memristive Devices and Computingmentioning
confidence: 99%
“…The implementation of memristor devices remains under research and development, considering various materials and arrangements like titanium dioxide [111], spintronics [112], or carbon nanotubes [113], with most approaches remaining compatible with CMOS fabrication. Memristive systems in the broader sense, like resistive random-access memories (ReRAMs) or even phase-change memories (PCMs), 3 are progressing towards commercial application [118,119]. Aside from memory, memristors are also interesting for in-memory computing, neuromorphic computing, and reconfigurable logic [115,120,121].…”
Section: Memristorsmentioning
confidence: 99%
“…Indeed, the works presented so far are based either on simulations or on real device data, or on memristive chips interfaced with some standard digital hardware. Despite integration of CMOS technology has been demonstrated for non-volatile resistive switching devices already at a commercial level ( 261,262 ), the design of co-integrated memristive-based neuromorphic processors is still under development. We envisage a three-phase process to achieve a fully integrated system.…”
Section: Co-integration Of Hybrid Cmos-memristive Neuromorphic Systemsmentioning
confidence: 99%