Reliability Design for Neutron Induced Single-Event Burnout of IGBT

Shoji, T.; Nishida, Shuichi; Ohnishi, Takafumi; Fujikawa, Touma; Nose, Noboru; Hamada, Keisuke; Ishiko, M.

doi:10.1541/ieejias.131.992

Cited by 16 publications

(21 citation statements)

References 6 publications

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“…Additionally, Asai et al [11] performed studies with neutrons, concluding that there exists no consistent difference in SEB tolerance between SiC diodes and SiC MOSFETs and that the conventional SEB mechanisms developed in Si MOSFETs, such as parasitic bipolar transistor and tunneling assisted avalanche multiplication mechanism, may be suppressed in SiC devices [12].…”

Section: Introductionmentioning

confidence: 99%

Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs

Martinella

Stark

Ziemann

et al. 2019

IEEE Trans. Nucl. Sci.

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High sensitivity of SiC power MOSFETs has been observed under heavy ion irradiation, leading to permanent increase of drain and gate leakage currents. Electrical postirradiation analysis confirmed the degradation of the gate oxide and the blocking capability of the devices. At low drain bias, the leakage path forms between drain and gate, while at higher bias the heavy ion induced leakage path is mostly from drain to source. An electrical model is proposed to explain the current transport mechanism for heavy-ion degraded SiC power MOSFETs.

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Section: Introductionmentioning

confidence: 99%

Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs

Martinella

Stark

Ziemann

et al. 2019

IEEE Trans. Nucl. Sci.

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“…As SiC has wider band gap (much less electron-hole pair generation) and higher dielectric breakdown field than Si, it is probable that the conventional SEB models developed in Si MOS-FETs such as parasitic bipolar transistor and funneling assisted avalanche multiplication models [12] may be suppressed in SiC devices, which decreases SEB probability of the SiC devices. In addition, the degradation of gate oxide of SiC MOSFET-R by spallation neutron irradiation may be contributed the SEB tolerance in SiC devices though that of SiC MOSFET-M could not be observed.…”

Section: Discussionmentioning

confidence: 99%

“…C OSMIC ray induced terrestrial neutrons can cause single-event effects (SEEs) in semiconductor devices, which crucially affect the reliability of electronic systems used in the terrestrial environment [1]- [12]. Among them, single-event burnout (SEB) of power devices is one of the most serious problems causing fatal damage to electric systems.…”

Section: Introductionmentioning

confidence: 99%

Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETs

Asai¹,

Nashiyama²,

Sugimoto³

et al. 2014

IEEE Trans. Nucl. Sci.

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SEB tolerance of SiC power MOSFETs against terrestrial neutrons is studied. It is shown that the failure probability increases exponentially with applied voltage and is several orders of magnitude lower than that of a Si MOSFET. The energetic secondary carbon atoms generated by the nuclear reactions and the collisions between the terrestrial neutrons and the lattice atoms of SiC devices may play important role in the SEB triggering mechanism in SiC power devices.Index Terms-Insulated gate bipolar transistor (IGBT), power device, power MOSFET, Schottky barrier diode (SBD), silicon carbide (SiC), single-event burnout (SEB), spallation neutron, terrestrial neutron.

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“…Transient thermal simulations have been used to investigate the behavior of electron-hole pairs generated along the ion tracks in power devices under the influence of the applied voltage. The electrostatic potential adopts a funnel-like shape and the highly localized current results in an increase in the electron density in the vicinity of the n − drift region/n + diffusion region interface [16], [18]- [20], [22]. This space charge effect leads to a shift of the peak electric field from the p − body region/n − drift region interface to the n − drift region/n + diffusion region interface.…”

Section: Introductionmentioning

confidence: 99%

Observation and Analysis of Neutron-Induced Single-Event Burnout in Silicon Power Diodes

Shoji

Nishida

Hamada

et al. 2015

IEEE Trans. Power Electron.

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Annular microvoids formed by neutron-induced single-event burnout (SEB) in Si power diodes were observed by a slice-and-view technique. The axial symmetry of damage region reflects the spatially isotropic thermal diffusion that occurred. Analytical formulas for the local rise in temperature during SEB were derived from the thermal diffusion equation. The local temperature was found to increase in direct proportion to the deposited energy, which was expressed as the time integration of the product of the applied voltage and the SEB current. This current is the result of charges generated by recoil ions and subsequent current-induced avalanche. The diameter of the damage region was estimated using the analytical formulas and the energy associated with Joule heating, which was calculated by technology computer-aided design device simulations, and was found to be comparable in size to the observed annular voids. The SEB current density was also calculated based on the simulated SEB current and the size of the damage region.Index Terms-Annular microvoids, current-induced avalanche (CIA), single-event burnout (SEB), thermal diffusion equation, white-neutron irradiation.

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Reliability Design for Neutron Induced Single-Event Burnout of IGBT

Cited by 16 publications

References 6 publications

Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs

Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs

Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETs

Observation and Analysis of Neutron-Induced Single-Event Burnout in Silicon Power Diodes

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