Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition

Abstract

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.

Robust and Electrically Conductive ZnO Thin Films and Nanostructures: Their Applications in Thermally and Chemically Harsh Environments

“…The doping of group IV elements (Ti, Hf, Zr, etc.) has been investigated to increase the conductivity and improve the thermal stability of ZnO thin films owing to their higher electronegativity and weaker ionic characteristics than conventional dopant elements (Al, Ga, and In). − These group IV elements have been suggested to suppress V O formation because of their relatively high metal–oxygen binding energy. , As shown in Figure , a previous study reported that Zr-doped ZnO thin films exhibited stable optical and electrical properties in the temperature range of 350–550 °C . In this sample, the resistivity increased significantly under thermal stresses above 550 °C, owing to the significant degradation in both carrier concentration and mobility (Figure b).…”

“…129−132 These group IV elements have been suggested to suppress V O formation because of their relatively high metal− oxygen binding energy. 133,134 As shown in Figure 7, a previous study reported that Zr-doped ZnO thin films exhibited stable optical and electrical properties in the temperature range of 350−550 °C. 136 In this sample, the resistivity increased significantly under thermal stresses above 550 °C, owing to the significant degradation in both carrier concentration and mobility (Figure 7b).…”

Impacts of HfO2/ZnO Stack-Structured Charge-Trap Layers Controlled by Atomic Layer Deposition on Nonvolatile Memory Characteristics of In-Ga-Zn-O Channel Charge-Trap Memory Thin-Film Transistors

“…Thanks to lots of advantages such as low-temperature process compatibility and optical transparency, they can be utilized for various applications such as flexible and transparent electronic systems. [1]- [4] However, to realize more advanced nonvolatile memory devices for next-generation consumer electronic applications, the wide memory window (MW), fast program/erase (P/E) speed, and long retention time should be simultaneously guaranteed with a lower-power consumption. On the contrary, it is difficult to obtain a fast P/E speed, low voltage operation, and a long retention time at the same time because of their trade-off relationship.…”