Reliability Investigations for Bulk-FinFETs Implementing Partially-Insulating Layer

FinFET devices are explicitly mentioned in the ITRS roadmap and have a good potential for scaling CMOS to 22 nm and below. Some physical characterization and reliability aspects of these devices are reviewed. Attention is given to transient floating body effects and low frequency noise, which may yield information on the materials' characteristics like carrier recombination lifetime or interface and oxide trap density. These methods can be useful to study the performance of these components under harsh operation conditions of low or high temperature, or at high bias voltages.

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“…The self-heating can be partly resolved by implementing socalled body-tied (BT) or bulk FinFETs [37,[42][43][44][45][46], represented in Fig. 10.…”

Section: Reliabilitymentioning

confidence: 99%

Reliability performance characterization of SOI FinFETs

Claeys

Put

Rafı́

et al. 2009

2009 2nd International Workshop on Electron Devices and Semiconductor Technology

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“…Now the CMOS technology has entered the world of Fin Field-Effect Transistors (FinFETs) [Com13]. Many publications claim that NBTI and PBTI are still the most dominating reliability issue in FinFETs [Cho06, Lia05,Par07]. Due to our project limitation in time, in this thesis the study has been carried out on CMOS processing without high-K materials, such as 65nm, 90nm and 140nm technologies.…”

Section: Reliabilitymentioning

confidence: 99%

Ageing and Embedded Instrument Monitoring of Analogue/Mixed-signal IPs

Wan¹

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stored in a retrieval system or transmitted in any form or by any means without permission of the author. Alle rechten voorbehouden. Niets uit deze uitgave mag worden vermenigvuldigd, in enige vorm of op enige wijze, zonder voorafgaande schriftelijke toestemming van de auteur. GRADUATION COMMITTEE:Chairman/secretary prof.dr.ir. J.N. Kok Supervisor dr.ir. H.G. Kerkhoff Members prof.dr.ir. G.J.M. Smit prof.dr.ir. A. Pras prof.dr. J. Figueras Pamies prof.dr.ir. S. Hamdioui prof.dr. J.L. Hurink dr. J. Bisschop My sincere thanks go to my wife, Jifeng Tang, for her countless efforts and time spent on taking care of family during my thesis writing. Without her help, I could not have made it.Also appreciation for my parents for their understanding when i was busy with my thesis and could not go back to visit them.I would like to show my gratitude particularly to my supervisor Hans Kerkhoff for his mentorship and support throughout my PhD work. Furthermore for his great patience and tremendous amount of time spent on reviewing my thesis. Also thanks to Prof. Gerard Smit for his reviewing of my thesis. I also would like to thank my colleagues at the University of

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