Reliability of 1310 nm Wafer Fused VCSELs

Abstract

Wafer fusion vertical cavity surface emitting laser (VCSEL) technology has produced devices that successfully passed all mechanical and electrical Telcordia qualification tests. Accelerated lifetime tests result in times to 1% failure at 70 °C of 18 years and 30 years at VCSEL driving currents of 9 and 8 mA, respectively. These lifetimes meet the telecom industry reliability requirements for applications in fiber-optic communications networks.

1.3‐µm buried‐heterostructure VCSELs with GaAs/AlGaAs metamorphic DBRs grown by MOCVD

“…The resolution of the optical spectrum analyser was 0.1 nm. For 15‐µm VCSELs, single‐mode emission is observed at 4 mA, and the emission area is five times as large as that with a buried‐tunnel‐junction structure [1–4]. The value of 15 µm is larger than the previously calculated one [10], so it can be inferred that the absorption of the n‐InGaAs current path layer and the undulation of the metamorphic DBRs can reduce the reflectivity of the high‐order mode.…”

“…Introduction: Long-wavelength (LW) (1.3-2.3 µm) VCSELs inherently have a potential for low-power-consumption operation and the ability to be configured into large-scale two-dimensional arrays, which makes them promising as light sources for data communications over optical fibre, for three-dimensional sensing, and for Laser Imaging Detection and Ranging (LiDAR) systems. LW-VCSELs with wafer-fusion structures [1,2], all epitaxial layers matched to InP [3], and dielectric mirrors [4] have demonstrated remarkable characteristics. However, they still have not achieved robust mass-production capability like GaAs-based VCSELs.…”

Reliability Analysis of Vertical Cavity Surface-Emitting Lasers Based on the Gamma Process

“…The output light power decreases with time, and when the light power decreases by 20%, we determine VCSELs to be ineffective [3]. In this paper, from the degradation of the data from the literature [5], using the above model, we analyze the reliability of the vertical cavity surface emitting lasers. A total of 5 VCSELs has undergone reliability analysis after the high temperature accelerated-related aging performance degradation, as shown in figure 2 for VCSELs working under 9 mA.…”

“…Sirbu et al studied the VCSEL reliability of wafer bonding at 1310 nm [5]. Eighteen years and 30 years of the life span of the vertical cavity surface-emitting laser has been obtained at the driving current of 8 mA and 9 mA, respectively, at the temperature of 70 • C. Robert W. Herrick et al studied the general influence of materials on their reliability, analyzed the common failure mechanisms and introduced the methods of the accelerated aging experiment [6].…”

Effect of Cavity Lifetime Variation on the Static and Dynamic Properties of 1.3-μm Wafer-Fused VCSELs

“…We employ state-of-the-art VCSELs fabricated by double wafer fusion of AlGaAs-GaAs DBRs on both sides of an InP-based active cavity [11], [12]. The photon lifetime is changed by either shallow etching of the top-DBR surface or by selective DBR pair removal.…”