Reliability of an Al₂O₃/SiO₂MIM Capacitor for 180nm (3.3V) Technology

Quantitative defect density extraction method for metal–insulator–metal capacitor

“…Metal-insulator-metal (MIM) capacitors are widely used in DRAMs, RF devices, and other electronic applications because of low leakage current, voltage linearity, high capacitance, and high-frequency operation capabilities [1][2][3][4][5]. As the thickness of MIM dielectric decreases for scaled devices, the influence of traps within the dielectric increases significantly, which in turn directly influences the hysteresis, the leakage currents, and the voltage linearity [6][7][8]. Even though more accurate trap analysis is necessary for scaled MIM capacitors, only limited analysis methods such as voltage coefficients and leakage current have been used for the quantitative analysis of MIM capacitors so far.…”