Reliability of compound semiconductor devices for space applications

Kayali, S.

doi:10.1016/s0026-2714(99)00180-8

Cited by 14 publications

(9 citation statements)

References 7 publications

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“…It was considered that the electrons were enriched on the surface of the printed circuit board (PCB) behind the photovoltaic unit, interfering with the conductive property of the gold wire and the solder joints, causing Ohmic contact degradation, and leading to battery degradation. [ 42 ] Therefore, it was believed that extremely intense radiation sources would cause the failure of the radioluminescent nuclear battery. In this experiment, the 1 × 10 10 e cm −2 s −1 fluence was the best intensity, allowing the battery to obtain good performance parameters.…”

Section: Resultsmentioning

confidence: 99%

In‐Depth Analysis of the Internal Energy Conversion of Nuclear Batteries and Radiation Degradation of Key Materials

Jiang

Meng

et al. 2020

Energy Tech

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Low conversion efficiency and energy output are the main factors hindering the application of the radioluminescent nuclear battery in space. This study analyzes the energy conversion process and proposes a solution of performance promotion. It is found that the energy conversion efficiency of the photovoltaic units is enhanced with increasing incident light intensity. The efficiency of the AlGaInP unit is stable at 22% when the incident energy is at least 3 μW. As for the GaAs unit, the incident threshold value of the photovoltaic response sensitivity is greater than 120 μW. The overall efficiency of the radioluminescent nuclear battery is only 0.37%, consisting of an AlGaInP unit loaded with a low activity 63Ni and the ZnS:Cu phosphor layer. The efficiency increases to 0.87% when an electron radiation source with 270.27 mCi cm−2 is adopted. Moreover, the intense intensity source constitutes an extremely electromagnetic pulse radiation environment, which cause the batteries to fail. The radiation damage is introduced to the phosphor layer by radiation sources, producing agglomerations and cracks on the surface and resulting in the transmittance reduction. This study provides guidance for improving the electrical property and optimization solutions of radioluminescent nuclear battery.

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Section: Resultsmentioning

confidence: 99%

In‐Depth Analysis of the Internal Energy Conversion of Nuclear Batteries and Radiation Degradation of Key Materials

Jiang

Meng

et al. 2020

Energy Tech

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“…However, reproducibility of a product does not guarantee reliability in the intended application. For critical space applications where the success or failure of a mission hinges on the lifetime and performance of a single device; it is critical that all aspects of the reliability and the various known failure modes and mechanisms be addressed prior to the insertion of the component in the application [1].…”

Section: Reliability Issuesmentioning

confidence: 99%

Reliability and Radiation Hardness of Compound Semiconductors

Kayali

Johnston

2003

Int. J. Hi. Spe. Ele. Syst.

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“…5, pp. 2030-2033, 1999 [41] J. Spradlin, S. Dogan, J. Xie, R. Molnar, A. A. Baski, and H. Morkoc, "Investigation of forward and reverse current conduction in GaN films", Appl.…”

Section: B Deep-level Transient Spectroscopymentioning

confidence: 99%

“…5, pp. 2030-2033, 1999 [34] R. T. Tung, "Electron transport at metal-semiconductor interfaces: General theory," Phys. Rev.…”

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confidence: 99%

Center for the Radiation Studies and Solutions

Mishra¹

1999

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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the AJ^KJL-biv-AlV-IJR-05-gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments reg information, including suggestions for reducing the burden, to the Department of Defense, Executive Services and Comnu that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a co control number, PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ORGANIZATION. 1. REPORT DATE (DD-MM-YYYY) 22/11/2004 REPORT TYPE Final Technical TITLE AND SUBTITLE"Center for Radiation Studies and Solutions" AUTHOR(S)Dr PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES)University of California, Santa Barbara Santa Barbara, CA 93106-2050 SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) AFOSR \K?4015 Wilson Blvd., Room 713 Arlington, VA 22203 PERFORMING ORGANIZATION REPORT NUMBER SPONSOR/MONITOR'S ACRONYM(S) SPONSOR/MONITORS REPORT NUMBER(S) DISTRIBUTION/AVAILABILITY STATEMENTDistribution Unlimited, approved for public release SUPPLEMENTARY NOTES ABSTRACTThe influence of the radiation to the performance of the GaN-based and GaAs-based electronic devices was investigated extensively. In order to study the effects upon various devices, several novel device structures (such as p-capped AlGaN/GaN HEMTs and GOI GaAs pHEMTs) as well as new processing techniques were developed. The radiation induced traps, the forward and reserved biased currents of the diodes and the DC current-voltage characteristics of HEMTs and HBTs were investigated as a function of gamma-ray and proton radiation energy and total dose. The degradation mechanisms were discussed. The research indicated that GaN has an intrinsically low susceptibility to radiation-induced material degradation and GaN-based electronic devices appear to be excellent candidates for use in space systems. SUBJECT TERMSAlGaN, GaN, AlGaAs, GaAs, FET, HEMT, HBT, diode, microwave power devices, gamma radiation effects, proton radiation effects Parti Device developmentTo study the effects of radiation upon the various devices, different types of GaAs and GaN-based electronic devices were developed. The growth, fabrication and characterization were investigated in detail.Oxidized GaAs pHEMT was studied. The growth was optimized to minimize the charge loss and partially oxidized pHEMT showed improved power added efficiency(PAE). Oxidation technique was also applied to GaAs-based HBTs. Oxide aperture GaAs HBT showed an increased f max due to the reduced base-collector capacitance.As to the GaN-based electronic devices, DC-to-RF dispersion phenomenon and its suppression were investigated. The temperature dependence of the DC and pulsed I-V characteristics were measured and related trapping mechanism was discussed. A p-GaN capped AlGaN/GaN HEMT was developed to reduce the dispersion without any surface passivation. Additionally, some GaN processing techniques were developed. Digital et...

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Reliability of compound semiconductor devices for space applications

Cited by 14 publications

References 7 publications

In‐Depth Analysis of the Internal Energy Conversion of Nuclear Batteries and Radiation Degradation of Key Materials

In‐Depth Analysis of the Internal Energy Conversion of Nuclear Batteries and Radiation Degradation of Key Materials

Reliability and Radiation Hardness of Compound Semiconductors

Center for the Radiation Studies and Solutions

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