Reliability of fine-pitch through-vias in glass interposers and packages for high-bandwidth computing and communications

Demir, Kaya; Sukumaran, Vijay; Sato, Yoichiro; Amrani, Abderrahim El; Ramachandran, Koushik; Pucha, Raghuram V.; Raj, P. Markondeya; Sundaram, Venkatesh; Tummala, Rao

doi:10.1007/s10854-018-9384-6

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Optimum Process1

Fine Via Patterning In a Built-up Film1

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2019

2024

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Cited by 6 publications

(2 citation statements)

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“…At high temperatures, expansion of TGV-Cu creates radial compression tension and shear stress in glass. Since the Young's modulus of polymer is much smaller than that of copper and glass substrates, 7 polymer can help alleviate stress at high temperature and improve the reliability.…”

Section: Optimum Processmentioning

confidence: 99%

75‐2: Failure Mechanisms and Optimum Methods for Through Glass Via

An,

Xiao,

Wei

et al. 2023

Symp Digest of Tech Papers

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Section: Optimum Processmentioning

confidence: 99%

75‐2: Failure Mechanisms and Optimum Methods for Through Glass Via

An,

Xiao,

Wei

et al. 2023

Symp Digest of Tech Papers

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“…The laser drilling process is widely used to obtain vias in a built-up film. 96,97) However, there are three major difficulties. First, it is difficult to make fine vias and line/space patterns because of laser wavelength limitations.…”

Section: Fine Via Patterning In a Built-up Filmmentioning

confidence: 99%

Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective

Ishikawa

Ishijima

Shirafuji

et al. 2019

Jpn. J. Appl. Phys.

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In this review, we discuss the progress of emerging dry processes with atomic precision. Researchers in the field of plasma processing and surface science have addressed the increasingly challenging demands of material selectivity by utilization of synergistic enhancement of etching or deposition. The discussion encompasses major challenges in the plasma science and technology community. The focus of the review is advances in atomic layer etching and area-selective deposition with activation or deactivation, especially in terms of materials scaling and variety. Control of high-aspect-ratio feature fabrication in semiconductor manufacturing and etched shapes of interior features at the nanoscale are needed. Issues related to profile distortion have received much attention. State-of-the-art techniques used in semiconductor manufacturing are reviewed and future challenges are outlined.

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