Reliability of InGaAsInP based separate absorption grading multiplication avalanche photodiodes

Montangero, P.; Azzini, G.A.; Neitzert, H. C.; Ricci, G.; Serra, L.

doi:10.1016/0026-2714(96)00026-1

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2014

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Cited by 9 publications

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“…And the dark currents of each device are monitored in situ throughout the test. 7 By applying the Arrhenius equation, the activation energy of the relevant failure mechanism can be extracted and the lifetime of the photodetectors can be predicted. 8 However, it usually takes thousands of hours to finish these tests.…”

Section: Introductionmentioning

confidence: 99%

Reliability characterization of silicon-based germanium waveguide photodetectors

Zhou

Wang

2014

Opt. Eng

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Abstract. A silicon-based germanium waveguide photodetector was demonstrated and its reliability related items were investigated. For different reverse biases, the slopes of the dark current increment versus stress time curves were first found to be the same, which made the lifetime extrapolation feasible. The lifetime of the photodetector under different bias was predicted by using a simple extrapolation method. In order to maintain the 10-year lifetime of the photodetector, the bias voltage should be kept lower than −3 V. For the first time, the degradation mechanism under stress biases was analyzed in detail by the reaction-diffusion (RD) model. The experimental results agree well with the theoretical derivation based on RD model.

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Section: Introductionmentioning

confidence: 99%