Reliability of monolithic RC-snubbers in MOS-based power modules

Abstract

The reliability of monolithic integrated 200 V RC-snubbers in silicon is investigated both on wafer and module level. The wafer level measurements indicate that the capacitor dielectric is capable of repetitively withstanding 200 V pulses with a continuous use voltage of 150 V for 46 years with a failure rate of 1 ppm. Potentially early failing devices can be identified on wafer level by a screening test. The RC-snubbers exhibit excellent stability to high temperature and high humidity high temperature based stress tests and to thermal cycling. This makes these devices a promising alternative to discrete surface mounted devices in RC snubber applications for modules in power electronic applications

Switching SiC Devices Faster and More Efficient Using a DBC Mounted Terminal Decoupling Si-RC Element

“…But merely adding a capacitor will require a very large capacitance acting as a second DC-link, buffering energy over the whole switching period. A smaller capacitance would form a LC resonance tank, resulting in current ringing through the terminal [5]. An much more effective method is to use an highly damping RC-network acting as a decoupling filter.…”

“…The novel silicon integrated high performance Si-RC network was recently introduced for reducing AC output ringing, lowering EMI issues on inverter modules while maintaining excellent reliability for a DBC mounted passive device [6]. This chip is also an excellent candidate to act as the introduced decoupling network.…”