Reliability of optoelectronic components for telecommunications

Sauvage, Didier; Laffitte, D.; Périnet, J.; Berthier, P.; Goudard, Jean-Luc

doi:10.1016/s0026-2714(00)00162-1

Cited by 11 publications

(12 citation statements)

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“…This lifetime evaluation is based on the failure criteria set, for this technology, on the central wavelength drift which must be lower than 0.1 nm at 1550 nm at 100 mA. But, actual experimental results show that even after long ageing test (close to 1 O hours), the failure criteria in not reached and sometimes only 5% drift of monitored parameters is observed predicting "extremely" low failure rate (see figure 2a) [9]. To illustrate this actual problem, typical failure rate function A(t) ofDFB-LD is presented in figure 2b composed ofthree different zones:…”

Section: Context and Objectivesmentioning

confidence: 99%

Estimation of lifetime distributions on 1550-nm DFB laser diodes using Monte-Carlo statistic computations

Deshayes

Verdier²,

Béchou³

et al. 2004

Reliability of Optical Fiber Components, Devices, Systems, and Networks II

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High performances and high reliability are two of the most important goals driving the penetration of optical transmission into telecommunication systems ranging from 880 nm to 1550 nm. Lifetime prediction defined as the time at which a parameter reaches its maximum acceptable shift still stays the main result in terms of reliability estimation for a technology. For optoelectronic emissive components, selection tests and life testing are specifically used for reliability evaluation according to Telcordia GR-468 CORE requirements. This approach is based on extrapolation of degradation laws, based on physics of failure and electrical or optical parameters, allowing both strong test time reduction and longterm reliability prediction. Unfortunately, in the case of mature technology, there is a growing complexity to calculate average lifetime and failure rates (FITs) using ageing tests in particular due to extremely low failure rates. For present laser diode technologies, time to failure tend to be 106 hours aged under typical conditions (P01O mW and T80°C). These ageing tests must be performed on more than 100 components aged during 10000 hours mixing different temperatures and drive current conditions conducting to acceleration factors above 300-400. These conditions are highcost, time consuming and cannot give a complete distribution of times to failure. A new approach consists in use statistic computations to extrapolate lifetime distribution and failure rates in operating conditions from physical parameters of experimental degradation laws. In this paper, Distributed Feedback single mode laser diodes (DFB-LD) used for 1550 nm telecommunication network working at 2.5 Gbitls transfert rate are studied. Electrical and optical parameters have been measured before and after ageing tests, performed at constant current, according to Telcordia GR-468 requirements.Cumulative failure rates and lifetime distributions are computed using statistic calculations and equations of drift mechanisms versus time fitted from experimental measurements. CONTEXT AND OBJECTIVESHigh-rate optical system performances are strongly related to micro-optoelectronic device parameters inserted into the transmitter and receiver blocks used for telecommunication applications. These blocks contain InP photonic and GaAs or InP electron devices. It has been already demonstrated that hybrid or monolithic integration used to assemble these modules (OEICs) suffer from various intrinsic and process dependent parasitic effects. In this case, reliability estimation is traditionally based on life-testing and a current approach is to apply Telcordia requirements (468GR) for optoelectronic applications [1]. But actual levels of reliability regarding long time to failure and very low failure rates lead to a dramatic increase difficulty for experimental evaluation. Moreover the complexities of system using infrared optics, used for align component and fiber, increase the difficulty to localize degraded zones responsible to optical power loss. Actual performances...

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Section: Context and Objectivesmentioning

confidence: 99%

Estimation of lifetime distributions on 1550-nm DFB laser diodes using Monte-Carlo statistic computations

Deshayes

Verdier²,

Béchou³

et al. 2004

Reliability of Optical Fiber Components, Devices, Systems, and Networks II

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“…The physical phenomenon associated with the I (V ) behaviour curve is thermally activated by measurement conditions and could be compared with an increase in dopant concentration in the semiconductor 41 . However, the active zone temperature during the ageing test, calculated using Equation (6), is close to 500 K. This temperature value cannot explain the increase in dopant concentration in the active zone, which is basically due to migration effects starting at annealing temperatures above 1100 K, with a diffusion probably inducing an increase in defect concentration [42][43][44][45] . In order to understand failure mechanisms, a theoretical study dealing with defect diffusion in the active zone has been developed according to the results of Darek and Lipinski 46 .…”

Section: Variations In P(t T) and Its Variation P(t T ) Before Anmentioning

confidence: 94%

“…This variation is directly associated to a doping change in the active layer. However, the internal active zone temperature during ageing is close to 500 K according to Equation (6) and cannot stimulate dopant diffusion. Indeed the necessary temperature to activate dopant diffusion must be greater than 1000 K 38,42,44 .…”

Section: Failure Mechanism Diagnostic Using Optical Characterizationsmentioning

confidence: 99%

“…Classical MTTF demonstrations for InGaAs/GaAs LEDs have resulted in a value of 2 × 10 5 h for 100 mA bias current and a junction temperature of about 500 K. In our case, MTTF is calculated for 100 mA and 400 K, but 400 K corresponds to the body package temperature. Equation (6) gives the thermal resistance, allowing us to calculate the junction temperature, close to 500 K, when the package temperature is close to 400 K.…”

Section: Reliability Investigations Using Technological Dispersionmentioning

confidence: 99%

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Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Deshayes

Béchou

Verdier

et al. 2005

Quality & Reliability Eng

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Numerous papers have already reported various results on electrical and optical performances of GaAs-based materials for optoelectronic applications. Other papers have proposed some methodologies for a classical estimation of reliability of GaAs compounds using life testing methods on a few thousand samples over 10 000 hours of testing. In contrast, fewer papers have studied the complete relation between degradation laws in relation to failure mechanisms and the estimation of lifetime distribution using accelerated ageing tests considering a short test duration, low acceleration factor and analytical extrapolation. In this paper, we report the results for commercial InGaAs/GaAs 935 nm packaged light emitting diodes (LEDs) using electrical and optical measurements versus ageing time. Cumulative failure distributions are calculated using degradation laws and process distribution data of optical power. A complete methodology is described proposing an accurate reliability model from experimental determination of the failure mechanisms (defect diffusion) for this technology. Electrical and optical characterizations are used with temperature dependence, short-duration accelerated tests (less than 1500 h) with an increase in bias current (up to 50%), a small number of samples (less than 20) and weak acceleration factors (up to 240).

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“…It is assumed that the same type of failure will be observed for aging but also for operating conditions guarantying the calculated lifetime from the experimental aging test results. This lifetime evaluation is based on the failure criteria set for this technology, in relation to the central wavelength drift which must be lower than 0.1 nm at 15 50 nm at 100 mAo But, actual experimental results show that even after long aging test (close to 10 4 hours), the failure criteria in not reached and sometimes only 5% drift of monitored parameters is observed predicting "extremely" low failure rate as reported in figure l(a) [6]. Typical general failure rate function A(t) of DFB-LD is presented in figure 1 b that can be separated into three different zones:…”

Section: Introductionmentioning

confidence: 99%

Monte-carlo computations for predicted degradation of photonic devices in space environment

Béchou¹,

Deshayes²,

Ousten³

et al. 2015

2015 IEEE Aerospace Conference

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Reliability of optoelectronic components for telecommunications

Cited by 11 publications

References 0 publications

Estimation of lifetime distributions on 1550-nm DFB laser diodes using Monte-Carlo statistic computations

Estimation of lifetime distributions on 1550-nm DFB laser diodes using Monte-Carlo statistic computations

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Monte-carlo computations for predicted degradation of photonic devices in space environment

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