Reliability of passivated p-type polycrystalline silicon thin film transistors

Peng, Du-Zen; Shin, Pyungho; Chang, Ting Chang; Chang, Chun

doi:10.1016/s0026-2714(00)00106-2

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“…For high-temperature postannealing, the temperature is often above 900 • C, which prevents its application to low-cost glass substrates. For plasma passivation, additional issues such as sensitive device performance due to process variation [8] and reliability problems emerge [10].…”

Section: Introductionmentioning

confidence: 99%

Bridged-Grain Solid-Phase-Crystallized Polycrystalline-Silicon Thin-Film Transistors

Zhou

Meng

Zhao

et al. 2012

IEEE Electron Device Lett.

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Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result of improved current flow and reduction of high drain electric field, the subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, and on-off ratio are greatly improved. Mechanisms of BG conduction are studied in detail.Index Terms-Bridged grain (BG), polycrystalline silicon (poly-Si), thin-film transistors (TFTs).

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Section: Introductionmentioning

confidence: 99%