Reliability of silicon integrated circuits

Oates, A. S.

doi:10.1016/b978-1-78242-221-1.00007-1

Cited by 11 publications

(6 citation statements)

References 102 publications

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“…The early phase of the dielectric breakdown is typically associated with the leakage current increase, characterized as "soft" breakdown. The later stage of the dielectric breakdown involves short failure, characterized as "hard" breakdown (Oates, 2015). Table I, the mechanism of the APD dielectric breakdown share some commonality with the ILD or gate dielectric breakdown in the integrated circuit (IC) transistor devices.…”

Section: Resultsmentioning

confidence: 99%

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Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Huang¹,

Jan²,

Chen³

et al. 2016

APR

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Avalanche photodiodes (APDs) are important building blocks for high-sensivity, low-noise receivers deployed in the datacenter, wireless and cloud computing networks. Maintaining stable dark current is a crucial task for overall robust sysem reliability. To achieve design-in low dark current stability, good knowledge of reliability physics is indispensable. In this work, we study the physical mechanisms of 10G/25G mesa-type APD degradation. We institute a predictive reliability model to account for the degradation processes. A comprehensive comparison of APD and IC transistor is also illustrated in terms of dielectric breakdown, mobile ion migration and hot carrier injection. The model suggests that surface leakage current is the dominant factor for the mesa-type APD degradation. Based on the model, it is predicted that highly reliable 10G/25G APD can be achieved with the suppression of weak links at the surface/interface states.

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Section: Resultsmentioning

confidence: 99%

“…Table I, the mechanism of the APD dielectric breakdown share some commonality with the ILD or gate dielectric breakdown in the integrated circuit (IC) transistor devices. For the ILD breakdown in the IC, the breakdown occurs along the interface between the low-k dielectric and its capping layer (Oates, 2015). Vol.…”

Section: Resultsmentioning

confidence: 99%

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Huang¹,

Jan²,

Chen³

et al. 2016

APR

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“…SEU and SET are considered "soft" errors and therefore mitigable, while SEL and SEB phenomena cause irreversible modifications of electronic structures. 333 For the radiation tolerance qualification of electronic components in space systems, two approaches are taken:…”

Section: Review Scitationorg/journal/rsimentioning

confidence: 99%

Ion thrusters for electric propulsion: Scientific issues developing a niche technology into a game changer

Holste

Dietz

Scharmann

et al. 2020

Review of Scientific Instruments

136

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The transition from OLD SPACE to NEW SPACE along with increasing commercialization has a major impact on space flight, in general, and on electric propulsion (EP) by ion thrusters, in particular. Ion thrusters are nowadays used as primary propulsion systems in space. This article describes how these changes related to NEW SPACE affect various aspects that are important for the development of EP systems. Starting with a historical overview of the development of space flight and of the technology of EP systems, a number of important missions with EP and the underlying technologies are presented. The focus of our discussion is the technology of the radio frequency ion thruster as a prominent member of the gridded ion engine family. Based on this discussion, we give an overview of important research topics such as the search for alternative propellants, the development of reliable neutralizer concepts based on novel insert materials, as well as promising neutralizer-free propulsion concepts. In addition, aspects of thruster modeling and requirements for test facilities are discussed. Furthermore, we address aspects of space electronics with regard to the development of highly efficient electronic components as well as aspects of electromagnetic compatibility and radiation hardness. This article concludes with a presentation of the interaction of EP systems with the spacecraft.

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“…IC Insights projects that semiconductor R&D will rise by a 5.5% compound annual growth rate (CAGR) from 2018 through 2023, up from 3.6% during 2013(McGrath, 2019. To ensure product quality, experimental and modelling of reliability failure modes related to electromigration, stress migration, dielectric breakdown, hot carrier, soft error, and three-dimensional (3D) ICs have been extensively studied over the past few decades (Oates, 2015;McPherson, 2012;Hu, 2009;Tu, 2011).…”

Section: Introductionmentioning

confidence: 99%

Reliability Scaling of Nanoscale Avalanche Photodiodes in High-Speed Optical Communication

Huang¹,

Chang²,

Jan³

2019

APR

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In the present era of big data and 5G wireless, both microelectronic and photonic components are indispensable building blocks. For microelectronics, device miniaturization has been following Moore's law to attain higher speed and greater functionality. For photonics, similar device scaling is also evolving in both lasers and photodiodes to transmit high data rates of 25 Gb/s and beyond. However, such device miniaturization may impose challenges such as reliability and fabrication that require careful scientific and engineering studies. In particular, the reliability understanding of photonic device scaling is fairly rudimentary with only scattered reports. In this paper, we study the device and reliability scaling of nanoscale avalanche photodiodes (APDs). The device miniaturization of APDs mainly involves thickness reduction in the charge control and multiplication layers. The layer reduction however causes an increase in breakdown field that may adversely affect reliability in several aspects such as electrical/optical overload and electrostatic discharge (ESD). We present a new reliability degradation model of APDs based on the breakdown field and correlate it with the experimental data. Empirical reliability equations are instituted to establish quantitative formulation. We discuss the overload and ESD performances as a function of breakdown field for both planar-type and mesa-type APD structures.

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Reliability of silicon integrated circuits

Cited by 11 publications

References 102 publications

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Ion thrusters for electric propulsion: Scientific issues developing a niche technology into a game changer

Reliability Scaling of Nanoscale Avalanche Photodiodes in High-Speed Optical Communication

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