2000
DOI: 10.1109/6040.826768
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Reliability of thick Al wire bonds in IGBT modules for traction motor drives

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Cited by 81 publications
(24 citation statements)
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“…1,2) In order to make high voltage, high current IGBT's, modules with high reliability on which many chips can be assembled in parallel must be developed. 3) As previously reported, 3) one side of the chip is soldered to a common electrode, and the other side of the chip is connected to another common electrode by ultrasonic, thick Al wire bonding technology. A metal substrate and AlN are used for heat dissipation and insulation, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…1,2) In order to make high voltage, high current IGBT's, modules with high reliability on which many chips can be assembled in parallel must be developed. 3) As previously reported, 3) one side of the chip is soldered to a common electrode, and the other side of the chip is connected to another common electrode by ultrasonic, thick Al wire bonding technology. A metal substrate and AlN are used for heat dissipation and insulation, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…Onuki et al have reported that such fatigue cracking would be suppressed when cyclic temperature fluctuation during operations is kept lower than 40 K. 1) They show that fatigue cracking occurs inside a bonded Al wire, not along the bonding interface. They also show that bonding strength depends on the film quality and increases with decrease of Al film hardness.…”
Section: Introductionmentioning
confidence: 99%
“…1) A SEM micrograph of Al wire bonds and an Al-1 mass% Si electrode film around wire bonds of the IGBT chip after the operation of invertors is shown in Fig. 1.…”
Section: Introductionmentioning
confidence: 99%
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“…35) As modules are composed of different materials with different thermal expansion coefficients, thermal stresses are induced at solder and wire bond joints. 1,4,5) The reliability enhancement of Al wire bonds is especially crucial to raise the reliability of IGBT modules at high temperatures because breaks in the Al wire itself can occur 1,68) through crack propagation along the small grain boundaries near the bonding interface due to tensile thermal stress generated during the operating cooling process 25) in the modules as schematically shown in Fig. 2.…”
Section: Introductionmentioning
confidence: 99%