Reliability of Ultra Thin Gate Oxide CMOS Devices: Design Perspective

Abstract

channel PMOSFET with constant NBTI level and changing amplitude (and hence changing CHC effect) [8]. In this work, we Assessment of design implications due to degradation of CMOS describe a methodology to be able to view the interaction between devices is increasingly required in the latest technologies. This paper NBTI and CHC as it occurs. discusses degradation due to channel hot carriers, NBTI and oxide breakdown from a design perspective -in terms of characterization, mechanisms and circuit analysis -introducing assessment of Vgs multiple degradation modes on same device.----------