Reliability optimization of gold-tin eutectic die attach layer in HEMT package

Zhang, Hao; Fan, Jiajie; Zhang, Jing; Qian, Cheng; Fan, Xuejun; Sun, Fan; Zhang, Guoqi

doi:10.1109/sslchina.2016.7804349

Cited by 2 publications

(1 citation statement)

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“…Currently, several advanced die attach materials and methods of attachment exist that increase electrical/temperature performance of power electronic devices, but the manufacturing and service processes often reduce mechanical reliability and manufacturing efficiency. For instance, Gold-tin eutectic solder alloy has been widely used as soldering material in attaching power dies due to its favorable mechanical properties and capability of fluxless soldering [6,7]. Huang et al [8] implied that the AuSn eutectic layer has been proven to provide good electrical and thermal conductivity, and reliable high temperature interconnection for power electronics.…”

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confidence: 99%

Effects of Sintering Pressure on the Densification and Mechanical Properties of Nanosilver Double-Side Sintered Power Module

Zhang

Liu

Wang

et al. 2019

IEEE Trans. Compon., Packag. Manufact. Technol.

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Modern power electronics has the increased demands in current density and high temperature reliability. However, these performance factors are limited due to the die attach materials used to affix power dies microchips to electric circuitry. Although several die attach materials and methods exist, nanosilver sintering technology has received much attention in attaching power dies due to its superior high temperature reliability. This paper investigated the sintering properties of nanosilver film in double side sintered power packages. X-ray diffraction (XRD) results revealed that the size of nanosilver particles increased after pressure-free sintering. Comparing with the pressure-free sintered nanosilver particles, the 5 MPa sintered particles showed a higher density. When increasing sinte ring pressure from 5 to 30 MPa, the shear strength of the sintered package increased from 8.71 MPa to 86.26 MPa. When sintering at pressures below 20 MPa, the fracture areas are mainly located between the sintered Ag layer and the surface metallization layer on the fast recovery diode (FRD) die. The fracture occurs through the FRD die and the metallization layer on bottom Mo substrate when sintering at 30 MPa. Index Terms-power electronics, nanosilver sintering, shear strength, fracture I. INTRODUCTION HE rapid development of wide-band gap semiconductors have facilitated power electronics becoming key components in hybrid electric vehicles, traction, wind turbine and high-voltage power transmission systems due to their

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confidence: 99%