Reliability Qualification of CoSi2 Electrical Fuse for 90Nm Technology

Tian, C.; Park, B.; Kothandaraman, C.; Safran, J.; Kim, D.; Robson, N.; Iyer, S.

doi:10.1109/relphy.2006.251234

Cited by 15 publications

(9 citation statements)

References 3 publications

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“…It has also been observed that a large amount of metal atoms electromigrate away even from the cathodes of p-fuses under strong pulsed current conditions [8], [10]. Therefore, it can be said that the subsidiary EM event also occurs at the edge of the silicided layer near the right side (dotted-line arrows).…”

Section: ) Model For the Firstmentioning

confidence: 99%

“…During EM, the metal atoms move from around the cathode end of the link toward the opposite anode end [3]. It has been known that intensive EM causes a large amount of metal atoms to move from the cathode [8], [10], and the metal often accumulates near the anode end. Within the two-step programming under moderate programming condition [4], after EM, drastic changes such as melting are thought to occur in the poly-Si layer below the broken link of the upper silicided layer.…”

Section: Introductionmentioning

confidence: 99%

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Systematic Study of the Dopant-Dependent Properties of Electrically Programmable Fuses With Silicided Poly-Si Links Through a Series of $I$– $V$ Measurements

Suto

Mori

Kanno

et al. 2007

IEEE Trans. Device Mater. Relib.

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Electrically programmable/writable fuses (e-fuses) with a Ni-silicided polycrystalline silicon narrow link and fabricated with four doping conditions were studied using two successive I-V measurements. The initial I-V sweeps can change e-fuses into targeted programmed states and display all of the programming processes where the currents change by many orders of magnitude. The second set of I-V curves can show stability and conduction in the programmed states for both bias polarities. Through the series of I-V measurements, the two-step programming with moderate blowing conditions could be reproduced and studied systematically. The programming processes of incompletely programmed states, before complete programming (CP), were found to be strongly dependent on the dopant conditions. The origin of the dopant dependency was considered within a simple electrical equivalent circuit model. At least two or three programmed states were identified among the completely programmed states in terms of the characteristic spreads of the final resistance and conduction behavior. The most distinctive currents after CP are similar to those in varistors. The stability of every programmed state is strongly dependent on the dopant conditions. Index Terms-Dopant, double Schottky barrier, electrically programmable fuse, electrically programmable/writable fuses (e-fuse), electromigration (EM), I-V measurement, nickel silicide, programming, transmission line model, varistor.

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Section: ) Model For the Firstmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Systematic Study of the Dopant-Dependent Properties of Electrically Programmable Fuses With Silicided Poly-Si Links Through a Series of $I$– $V$ Measurements

Suto

Mori

Kanno

et al. 2007

IEEE Trans. Device Mater. Relib.

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show abstract

“…A typical implementation is a poly (or Cu) fuse, where Joule heating is used to melt metal link and resulting resistance change is sensed by using a latch as shown in Fig. 1a [1][2][3][4][5][6][7][8][9][10][11]. Anti-fuse is one of the candidates for e-fuse [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

PMOSFET anti-fuse using GIDL-induced-HEIP mechanism

Seo

Seok

Kim

et al. 2010

Microelectronics Reliability

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“…In addition to the FPGA and antifuse technique, the electrical fuse (eFUSE) is another candidate for reconfigurable logic applications [4]- [6]. However, eFUSE takes up a large area and requires a high current to blow the fuse.…”

Section: Introductionmentioning

confidence: 99%