2024
DOI: 10.3390/mi15050561
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Reliability Study of Metal-Oxide Semiconductors in Integrated Circuits

Boris V. Malozyomov,
Nikita V. Martyushev,
Natalia Nikolaevna Bryukhanova
et al.

Abstract: This paper is devoted to the study of CMOS IC parameter degradation during reliability testing. The paper presents a review of literature data on the issue of the reliability of semiconductor devices and integrated circuits and the types of failures leading to the degradation of IC parameters. It describes the tests carried out on the reliability of controlled parameters of integrated circuit TPS54332, such as quiescent current, quiescent current in standby mode, resistance of the open key, and instability of … Show more

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