Reliability study on bst capacitors for gaas mmic

Noma, A.; Ueda, Daisuke

doi:10.1080/10584589708015697

Cited by 17 publications

(7 citation statements)

References 2 publications

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“…6), yielding a value of E G ðTÞ ¼ ð3:30 AE 0:17ÞeV À ð5 AE 1Þ Â 10 À4 eV T=K (10) agreeing very well with the result by Moos (E G (T) 5 3.25 eV-5.85 Â 10 À4 eV Á T/K). 6), yielding a value of E G ðTÞ ¼ ð3:30 AE 0:17ÞeV À ð5 AE 1Þ Â 10 À4 eV T=K (10) agreeing very well with the result by Moos (E G (T) 5 3.25 eV-5.85 Â 10 À4 eV Á T/K).…”

Section: Resultssupporting

confidence: 87%

“…A quantitative analysis of the data reveals several parameters: first, the bandgap energy E G , which is calculated from the Arrhenius plot of the conductivity values in the intrinsic minimum ( Fig. 6), yielding a value of E G ðTÞ ¼ ð3:30 AE 0:17ÞeV À ð5 AE 1Þ Â 10 À4 eV T=K (10) agreeing very well with the result by Moos (E G (T) 5 3.25 eV-5.85 Â 10 À4 eV Á T/K). 21 Second, the thermal activation of oxygen vacancy diffusion E A,Vö ,…”

Section: Resultsmentioning

confidence: 99%

“…[1][2][3] The most promising and widely investigated material systems are perovskite titanates, especially in the form of thin film. 9 Perovskite titanate thin films are also used in mobile communication systems like decoupling capacitors in monolithic microwave integrated circuits (MMICs) 10 or tunable devices, 11 and they can be found in microelectromechanical devices (MEMs). 9 Perovskite titanate thin films are also used in mobile communication systems like decoupling capacitors in monolithic microwave integrated circuits (MMICs) 10 or tunable devices, 11 and they can be found in microelectromechanical devices (MEMs).…”

Section: Introductionmentioning

confidence: 99%

“…The current research comprises the integration of high-k thin films in dynamic random access memories (DRAMs), 4,5 the replacement of silicon oxide as the gate dielectric in field effect transistors (FETs), 6 the development and integration of ferroelectric thin films into new functional devices like non-volatile memories (FeRAMs), 7,8 or ferroelectric field effect transistors (FeFETs). 9 Perovskite titanate thin films are also used in mobile communication systems like decoupling capacitors in monolithic microwave integrated circuits (MMICs) 10 or tunable devices, 11 and they can be found in microelectromechanical devices (MEMs). 12 Another area of the utilization of perovskite titanate thin films is sensors.…”

Section: Introductionmentioning

confidence: 99%

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Electrical Conductivity of Epitaxial SrTiO₃ Thin Films as a Function of Oxygen Partial Pressure and Temperature

Ohly

Hoffmann‐Eifert

Guo

et al. 2006

Journal of the American Ceramic Society

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SrTiO3 (100) epitaxial films with thicknesses of 3, 1 μm, and 250 nm were prepared on MgO (100) substrates by pulsed‐laser deposition. The electrical conductivities of the thin films were systematically investigated as a function of temperature and ambient oxygen partial pressure. This was made possible by using a specially designed measurement setup, allowing the reliable determination of resistances of up to 25 GΩ in the temperature range of 600°–1000°C under continuously adjustable oxygen partial pressures ranging from 10−20 to 1 bar. The capabilities of the measurement setup were tested thoroughly by measuring a SrTiO3 single crystal. The well‐known characteristics, e.g., the decline of the conductivity with a slope of –1/4 under reducing conditions and the opposite +1/4 behavior in oxidizing atmospheres, are found in the log(σ)–log(pO2) profiles of the epitaxial films. However, the p‐type conductivity decreases, and the n‐type conductivity increases with decreasing film thickness. This phenomenon is attributed to the charge carrier redistribution in the surface space charge layers. Owing to the high surface‐to‐volume ratio, the space charge layers play an important role in thin films.

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Section: Resultssupporting

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electrical Conductivity of Epitaxial SrTiO₃ Thin Films as a Function of Oxygen Partial Pressure and Temperature

Ohly

Hoffmann‐Eifert

Guo

et al. 2006

Journal of the American Ceramic Society

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“…1 For other applications, the benefit of thin-film capacitor technology may be based on the ability either to provide integrated capacitor networks and RCL circuits or to integrate them into the packaging architecture, rather than direct integration with the integrated circuit (IC). For these applications, the main motivation for developing a thin-film technology is that it can lead to a higher level of integration than can be achieved with discrete components.…”

Section: Introductionmentioning

confidence: 99%

Leakage and Reliability Characteristics of Lead Zirconate Titanate Thin‐Film Capacitors

Alshareef

Dimos

1997

Journal of the American Ceramic Society

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Resistance degradation in lead zirconate titanate (Pb(Zr,Ti)O3, PZT) thin‐film capacitors has been studied as a function of applied voltage, temperature, and film composition. The mean time‐to‐failure (lifetime, or tf) of the capacitors shows a power‐law dependence on voltage of the form tf∝V−n (n similar/congruent 4‐5). The capacitor lifetime also exhibits a temperature dependence of the form tf∝ exp[Ea/(kT)], with an activation energy of 0.6‐1.0 eV. The steady‐state leakage current in these samples seems to be bulk controlled. The voltage V, temperature T, and polarity dependence of the leakage current collectively suggest a leakage‐current mechanism that is most similar to a Frenkel‐Poole process. The tf value and the leakage current of niobium‐doped PZT films are superior to those of undoped PZT films. This result can be explained on the basis of the point‐defect chemistry of the PZT system. Finally, the results indicate that the niobium‐doped PZT films meet essential tf requirements for decoupling‐capacitor applications.

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High Performance Barium Strontium Titanate Thin Film Capacitors for Decoupling Applications

Kamehara

Kurihara

Baniecki

et al. 2006

Ceramic Transactions Series

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Reliability study on bst capacitors for gaas mmic

Cited by 17 publications

References 2 publications

Electrical Conductivity of Epitaxial SrTiO₃ Thin Films as a Function of Oxygen Partial Pressure and Temperature

Electrical Conductivity of Epitaxial SrTiO₃ Thin Films as a Function of Oxygen Partial Pressure and Temperature

Leakage and Reliability Characteristics of Lead Zirconate Titanate Thin‐Film Capacitors

High Performance Barium Strontium Titanate Thin Film Capacitors for Decoupling Applications

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Reliability study on bst capacitors for gaas mmic

Cited by 17 publications

References 2 publications

Electrical Conductivity of Epitaxial SrTiO3 Thin Films as a Function of Oxygen Partial Pressure and Temperature

Electrical Conductivity of Epitaxial SrTiO3 Thin Films as a Function of Oxygen Partial Pressure and Temperature

Leakage and Reliability Characteristics of Lead Zirconate Titanate Thin‐Film Capacitors

High Performance Barium Strontium Titanate Thin Film Capacitors for Decoupling Applications

Contact Info

Product

Resources

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Electrical Conductivity of Epitaxial SrTiO₃ Thin Films as a Function of Oxygen Partial Pressure and Temperature

Electrical Conductivity of Epitaxial SrTiO₃ Thin Films as a Function of Oxygen Partial Pressure and Temperature