Reliability study on pseudomorphic InGaAs power HEMT devices at 60 GHz

Chen, C.H.; Saito, Yuta; Yen, H.C.; Tan, K. H.; Onak, G.; Mancini, J.

doi:10.1109/mwsym.1994.335231

Cited by 8 publications

(1 citation statement)

References 2 publications

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“…High channel temperature not only degrades the device characteristics but also decreases the device lifetime. Experimental proofs have been observed for InGaAs MHEMTs [4][5][6][7], and the importance of the long-term stability of MHEMTs has been reported by several research groups [8][9][10][11][12]. It was reported that high channel temperature accelerated degradation processes in MHEMTs, such as gate sinking, ohmic contact degradation, hot electron issues, etc 3 Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Structural effects on heat dissipation in InGaAs MHEMTs

Noh

Ryoo

Jeon

et al. 2013

Semicond. Sci. Technol.

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Since the high thermal resistance of InGaAs metamorphic high electron mobility transistors (MHEMTs) limits their applicability, thermal management should be taken into account when designing the device structure. In this study, structural effects on heat dissipation in InGaAs MHEMTs were carefully investigated and experimentally validated. With an air bridge thickness of 10 μm and a gate pitch distance of 24 μm, the maximum channel temperature in a flip-chip bonded device was noticeably reduced from 132 to 106 • C (i.e. corresponding thermal resistance from 252.17 to 178.14 K W −1). Improved heat dissipation with the proposed structure was experimentally validated using backside-mounted devices by an infrared temperature measurement method.

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