Reliability test of MESFETs in presence of hot electrons

Mil’shtein, S.; Ersland, Peter; Gil, C.

doi:10.1109/relphy.2002.996641

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…The high electric field between the drain and the gate-that is, the drain voltage-is the essential factor for inducing the hot electrons and leads to impact ionization. However, the key parameter influencing impact ionization upon DC hot-electron stresses is the number of hot electrons relating to the drain current when the electric field between the drain and the gate is sufficiently high [10]. Two conditions are used to investigate the impact of hot-electron stresses on the gate leakage current: devices being stressed under the saturation drain current and devices being stressed under the maximum gate leakage current.…”

Section: Introductionmentioning

confidence: 99%

Hot-electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses

Huang¹,

Wang²,

Houng³

et al. 2006

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 99%

Hot-electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses

Huang¹,

Wang²,

Houng³

et al. 2006

Microelectronics Reliability

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Reliability characteristics of pHEMT resulting from electron interaction with interface states under the gate

Mil’shtein

Ersland²,

Gil³

et al.

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.

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Hot-Carrier-Related Increase in Drain Resistance and Its Suppression by Reducing Contaminants in InP-Based HEMTs

Fukai

Sugitani

Enoki

et al. 2008

IEEE Trans. Device Mater. Relib.

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We examined the issue of reliability of InP-based high-electron mobility transistors (HEMTs), focusing on the increase of drain resistance R d . In investigations of the mechanism of R d increase, we took note of contaminant incorporation and of the relations between the device lifetime and the strength of the channel electric field. In the fabrication process, reducing contaminants, especially fluorine, significantly suppressed the increase of source and drain resistances. Cross-sectional views of the gate of improved devices, which had a long lifetime, confirmed an almost contaminant-free surface around the gate. In acceleration tests, the most negative impact on drain resistance stability among several bias conditions was found when the current density was high and the channel electric field was large at the same time. The dependence of drain-gate electric field strength E showed that the device lifetimes of HEMTs determined from R d increase obeyed exp(1/E), which means that impact ionization was the main cause of degradation. We elucidate that the interactions of hot carriers with contaminants around the gate are the main causes of the R d increase in HEMTs. Suppression of device degradation was achieved by optimizing the fabrication process around the gate. In this way, device lifetime was remarkably enhanced.Index Terms-Drain resistance increase, impact ionization, InP-based high-electron mobility transistors (HEMTs), reliability.

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Reliability test of MESFETs in presence of hot electrons

Cited by 3 publications

References 7 publications

Hot-electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses

Hot-electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses

Reliability characteristics of pHEMT resulting from electron interaction with interface states under the gate

Hot-Carrier-Related Increase in Drain Resistance and Its Suppression by Reducing Contaminants in InP-Based HEMTs

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