Reliable Ge₂Sb₂Te₅‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy

Abstract

Conductive bridge random access memory (CBRAM) is a possible replacement for static field‐programmable gate arrays (FPGAs) based on random‐access memory. Ge2Sb2Te5 (GST) is used in CBRAMs as a solid electrolyte due to its high diffusion properties of active ions and scalability to obtain high‐density memory devices. Here, the trade‐off between high memory window and uniformity of CBRAM based on GST is solved by introducing N atoms into the SE. Nitrogen‐incorporated GST film (N‐GST) is proposed as a replacement for the current GST‐based CBRAMs with improved performance and better opportunities for conventional FPGA technologies. A bidirectional polarity‐dependent characteristic with high ION/IOFF ratio and satisfactory operation voltage is achieved by using N‐GST thin film in a programmable metallization cell (PMC). Integration of N atoms in the GST‐based PMC with a simple structure of Ag/ N‐GST /Pt increases the resistance ratio more than 100 times compared to an undoped one. Consistent data retention is attained in both resistance states for ≥3.5 × 104 s at temperature up to 85 °C.

Scalable and High-Throughput Top-Down Manufacturing of Optical Metasurfaces

“…Furthermore, the extraordinary optical properties of metasurfaces enable the perfect absorption of light [ 24 , 25 , 26 , 27 , 28 , 29 , 30 ], and light manipulating applications such as beam splitting [ 31 , 32 , 33 ], verification and enhancement of the spin Hall effect [ 34 , 35 , 36 ], asymmetric transmission [ 37 ], multifunctional waveguides [ 38 ], and other light-manipulation applications [ 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 ]. In addition, the researches on various materials of the metasurfaces have been actively reported: a metasurface-based solar reflector using vanadium dioxide (VO 2 ) [ 43 , 50 , 51 , 52 , 53 ], a study on the manufacturing of graphene oxide film for anisotropic photoresponse [ 54 ], and the scalable nanostructures of molybdenum disulfide (MoS 2 ) [ 55 ]. However, in order for existing bulk optical devices or components to be completely replaced with metasurfaces, those metasurfaces must be fabricated consistently with a large area and high throughput.…”

A new opportunity for the emerging tellurium semiconductor: resistive switching device implementation

“…Actually, PCMs have often been utilized as the dielectric layer in EC-RS devices but most of these devices used electrochemically active Ag or Cu electrodes. [71][72][73][74] Recently, the use of Te electrodes was also found to enable RS [59][60][61][62][63][64] in which the formation of local conducting filaments led to HR-to-LR transition while the rupture of filaments led to the reverse transition. In order to confirm whether the RS phenomenon for our Te/Sb2Te3/Te devices was based on such process, we measured the electrode area dependent HRs and LRs of the device in the NV-RS (under 500 μA CC) and V-RS (under 1.5 mA CC) modes, respectively.…”

Recent Advances in Tunable and Reconfigurable Metamaterials

“…Generally, the thermal tuning of MM has the advantages of a sufficient tuning range and compatibility of incorporation in integrated circuits [ 39 ]. However, it has the disadvantages of a slow modulation speed due to the time required for heating and cooling, and a tuning scope that is outside of the visible spectrum.…”