2004
DOI: 10.1143/jjap.43.7572
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Reliable Measurements of Defect Profiles in Low-Energy Boron Implanted Silicon

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“…In principle, detection of defects can be done either indirectly, through their effect on the physical/electrical properties of the semiconductor, or directly by 3D structural imaging. The physical/electrical activity of the defects can be detected and characterized by techniques such as ESR, [111][112][113][114][115] NMR, [116][117][118] deep level transient spectroscopy, [119][120][121] and thermally stimulated current. 122,123 For large enough samples, these types of measurements can be used to detect even low densities of electrically active defects (introducing levels in the forbidden energy gap).…”
Section: Esr Nanoscopymentioning
confidence: 99%
“…In principle, detection of defects can be done either indirectly, through their effect on the physical/electrical properties of the semiconductor, or directly by 3D structural imaging. The physical/electrical activity of the defects can be detected and characterized by techniques such as ESR, [111][112][113][114][115] NMR, [116][117][118] deep level transient spectroscopy, [119][120][121] and thermally stimulated current. 122,123 For large enough samples, these types of measurements can be used to detect even low densities of electrically active defects (introducing levels in the forbidden energy gap).…”
Section: Esr Nanoscopymentioning
confidence: 99%