Reliable polarization switching of BiFeO
            <sub>3</sub>

Baek, Seung Hyub; Eom, C. B.

doi:10.1098/rsta.2012.0197

Cited by 35 publications

(30 citation statements)

References 49 publications

(98 reference statements)

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“…In epitaxially grown BFO thin films, ferroelectric domain formation can be manipulated by the growth conditions and strain engineering. This epitaxial strain stabilizes the formation of ferroelastically twinned ferroelectric domains, which can be further modified by the change in the substrate-induced strain 16,17 . In such BFO films, ferroelastic domains play an important role in facilitating the coupling between the polarization and the magnetization via the ferroelastic switching of (111) antiferromagnetic plane 15,16 .…”

Section: Introductionmentioning

confidence: 99%

“…This epitaxial strain stabilizes the formation of ferroelastically twinned ferroelectric domains, which can be further modified by the change in the substrate-induced strain 16,17 . In such BFO films, ferroelastic domains play an important role in facilitating the coupling between the polarization and the magnetization via the ferroelastic switching of (111) antiferromagnetic plane 15,16 . Direct control over magnetization by electric field via ferroelastic switching potentially facilitates ultralow power voltage controlled spintronics and non-volatile magnetoelectric memory devices 15,17,20 .…”

Section: Introductionmentioning

confidence: 99%

“…Recent studies have shown that the (100)/(001) oriented epitaxial rhombohedral BFO films can exhibit complex stripe domain patterns by reducing the substrate symmetry either by choosing high miscut angle cubic substrates (mainly STO (001)) 16,21 or by the use of low symmetry orthorhombic substrates (mainly (110)-cut rare-earth scandate substrates) 17 . Most of the reports are based on the piezoresponse force microscopy (PFM) studies of ferroelastic domains in (100) epitaxial BFO films.…”

Section: Introductionmentioning

confidence: 99%

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Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate

Sharma

Agarwal

Phatak

et al. 2017

Sci Rep

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Here, we report the observation of ferroelectric and ferroelastic nanodomains in (110)-oriented BiFeO3 (BFO) thin films epitaxially grown on low symmetric (100) NdGaO3 (NGO) substrate. We observed long range ordering of ferroelectric 109° stripe nanodomains separated by periodic vertical domain walls in as-grown 130 nm thick BFO films. The effect of La0.67Sr0.33CoO3 (LSCO) conducting interlayer on domain configurations in BFO/NGO film was also observed with relatively short range-ordering of stripe domains due to the modified electrostatic boundary conditions in BFO/LSCO/NGO film. Additional studies on B-site doping of Nb ions in BFO films showed change in the domain structures due to doping induced change in lattice anisotropy while maintaining the stripe domain morphology with 109° domain wall. This long-range array of ferroelectric and ferroelastic domains can be useful for optoelectronic devices and ferroelastic templates for strain coupled artificial magnetoelectric heterostructures.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate

Sharma

Agarwal

Phatak

et al. 2017

Sci Rep

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“…[7] While many of these established applications are based on bulk samples (either single crystals or ceramics), there has recently been a substantial drive to exploit and enhance the desirable functional properties of ferroelectric oxides in thin film form. [14] A wide range of remarkable functionalities has been shown in BFO thin films, [15] such as a tuneable ferroelectric domain structure, [16] strongly strain-dependent magnetic structure, [17] and electric-field sensitive magnetic functionalities. [14] A wide range of remarkable functionalities has been shown in BFO thin films, [15] such as a tuneable ferroelectric domain structure, [16] strongly strain-dependent magnetic structure, [17] and electric-field sensitive magnetic functionalities.…”

mentioning

confidence: 99%

Revisiting the Optical Band Gap in Epitaxial BiFeO₃ Thin Films

Sando

Carrétéro

Grisolia

et al. 2017

Advanced Optical Materials

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the pursuit of electric-field-controlled magnetism. [2] BFO is part of a larger family of ferroelectric oxides, important compounds that are relevant in the fields of optical modulation, [3] data storage, [4,5] actuation, [6] and sensing. [7] While many of these established applications are based on bulk samples (either single crystals or ceramics), there has recently been a substantial drive to exploit and enhance the desirable functional properties of ferroelectric oxides in thin film form. [8][9][10] Epitaxial strain [11] is a powerful tool in this context: tuning the structure of thin films by strain can bring about, for example, strong modification of ferroelectric polarization and transition temperatures, [12] spin configurations, [13] and magnetic and magneto-transport properties. [14] A wide range of remarkable functionalities has been shown in BFO thin films, [15] such as a tuneable ferroelectric domain structure, [16] strongly strain-dependent magnetic structure, [17] and electric-field sensitive magnetic functionalities. [18,19] While the bulk parent compound of BFO is rhombohedral (R'), a peculiar aspect of thin film BFO is the formation, under strong (≈4%) compressive strain, of a giant axial ratio tetragonal-like (T') polymorph. [20,21] This change in structure is concomitant with a modification of the oxygen coordination (from octahedral to square pyramidal) and drastic changes in optical [22] and piezoelectric responses, [23] and magnetic properties. [24] From an optical point of view, BFO has a band gap that is rather low for ferroelectric oxides, [25] and it exhibits a significant bulk photovoltaic effect, [26] pushing it into the realm of optical research in the hope of using it in energy harvesting, photocatalysis or optical devices. [22] Given the significant general interest of ferroelectrics for photovoltaic applications, [27] it is important to obtain a stronger understanding of the influence of growth parameters and other factors on the optical properties of BFO thin films. In addition, significant size effects, related to microstrain and oxygen content, have been shown to influence the optical response of BFO nanoparticles. [28] Although a large body of literature regarding optical properties (particularly the band gap) for BFO in the form of thin films exists, there is a large dispersion in the data, with reported values for R' BFO ranging from 2.65 to 2.82 eV. For A detailed structural and optical band gap characterization study for more than 40 epitaxial bismuth ferrite (BiFeO 3 -BFO) thin films, measured by X-ray diffraction, atomic force microscopy, and optical transmission spectroscopy, is reported. The films are grown in different deposition systems to varying thicknesses (10-140 nm), on several substrates, and under different growth and cooling conditions. Using the results and literature data, first it is shown that the band gap measured by transmission is systematically lower than the gap found by ellipsometry, suggesting that sufficient caution must be exercised when comparing...

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“…So far, the observed ferroelectric retentions of BFO thin films and the isolated BFO islands last only from few hours to about 1 day (ref. 27). Since the 180° switching of BFO(111) always accompanies the ferroelastic deformation, the prerequisite for the polarization relaxation is to conquer the elastic energy penalty originating from such a deformation.…”

Section: Resultsmentioning

confidence: 99%

Permanent ferroelectric retention of BiFeO3 mesocrystal

Hsieh¹,

Xue

Yang

et al. 2016

Nat Commun

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Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric retention. Studied by scanning probe microscopy and transmission electron microscopy, and supported via the phase-field simulations, the key to the success of ferroelectric retention is to prevent the crystal from ferroelastic deformation during the relaxation of the spontaneous polarization in a ferroelectric nanocrystal.

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Reliable polarization switching of BiFeO ₃

Cited by 35 publications

References 49 publications

Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate

Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate

Revisiting the Optical Band Gap in Epitaxial BiFeO₃ Thin Films

Permanent ferroelectric retention of BiFeO3 mesocrystal

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Reliable polarization switching of BiFeO 3

Cited by 35 publications

References 49 publications

Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate

Long-range Stripe Nanodomains in Epitaxial (110) BiFeO3 Thin Films on (100) NdGaO3 Substrate

Revisiting the Optical Band Gap in Epitaxial BiFeO3 Thin Films

Permanent ferroelectric retention of BiFeO3 mesocrystal

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Product

Resources

About

Reliable polarization switching of BiFeO ₃

Revisiting the Optical Band Gap in Epitaxial BiFeO₃ Thin Films