2020
DOI: 10.1016/j.apsusc.2020.147387
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Remarkable intrinsic ZT in the 2D PtX2(X = O, S, Se, Te) monolayers at room temperature

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Cited by 37 publications
(19 citation statements)
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“…2 and Table 1, these results indicate that the PtS 2 single layer is a semiconductor with an indirect energy gap of 2.67 eV, which approximates the bandgap values of PtS 2 from 2.64 eV to 2.83 eV in previous studies. 53,55,56 Moreover, the BN single-layer is a semiconductor with a direct gap of 5.69 eV, in accord with the measured value of 5.56 eV. 54 Thus, this is the appropriate approach for calculating the band gaps using the HSE06 functional.…”
Section: Electronic Propertiessupporting
confidence: 63%
“…2 and Table 1, these results indicate that the PtS 2 single layer is a semiconductor with an indirect energy gap of 2.67 eV, which approximates the bandgap values of PtS 2 from 2.64 eV to 2.83 eV in previous studies. 53,55,56 Moreover, the BN single-layer is a semiconductor with a direct gap of 5.69 eV, in accord with the measured value of 5.56 eV. 54 Thus, this is the appropriate approach for calculating the band gaps using the HSE06 functional.…”
Section: Electronic Propertiessupporting
confidence: 63%
“…At 600 K, the ptype pentagonal PtS 2 and PtSe 2 have the zT values of up to 1.46 (x direction) and 3.42 (x direction), while the pentagonal PtTe 2 shows the largest zT value, which is 5.03 (x direction). For these three materials, the largest zT of them is 2.68 (y direction) of the pentagonal PtTe 2 monolayer at 600 K. For the p-type pentagonal PtTe 2 monolayer, from 300 to 600 K, the zT value of the pentagonal PtTe 2 monolayer increased from 2.60 to 5.03 along x directions, which is better than the hexagonal PtTe 2 monolayer (zT = 1.65 at 300 K) 60 and PbI 2 monolayer (zT = 3.15 at 600 K). 61 Overall, our studies establish that the pentagonal PtTe 2 monolayer is a good p-type semiconductor thermoelectric material at high temperatures.…”
Section: Computational Detailsmentioning
confidence: 90%
“…In particular, atomic-scale materials exhibiting a TE effect have great potential as ideal platforms for small-scale energy harvesting and microcooling. Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as MoX 2 (X = S and Se), , WX 2 (X = S and Se), , and PtX 2 (X = S, Se, and Te), are considered as promising materials for TE applications due to their large energy band gaps and atomically thin layers. The ZT of these materials can be improved by increasing their thermopower caused by quantum confinement in the interlayer direction of atomic-scale TMDC layer structures.…”
mentioning
confidence: 99%