Remarkable photoluminescence enhancement of ZnS–AgInS2 solid solution nanoparticles by post-synthesis treatment

Abstract

The photoluminescence intensity of ZnS-AgInS(2) solid solution nanoparticles was remarkably enhanced by increasing the heating temperature to 180 degrees C, above which the emission was simply diminished, while ZnS coating of the particles resulted in further enhancement of PL intensity, giving the highest quantum yield of ca. 80%.

Dual luminescent arrays sensor fabricated by inkjet-printing of pressure- and temperature-sensitive paints

“…The absorption and emission spectra of PtTFPP have peaks around 395 nm and 650 nm, respectively [2,18,19]. We focused on ZnS-AgInS 2 (ZAIS) nano-particles [20,21] as a temperature-sensitive luminophore. ZAIS is one of quantum dots and has following notable features: (i) tunable peak wavelength of the luminescence from 530 nm to 750 nm by varying the composition x in the precursor, (AgIn) x Zn 2(1−x) (S 2 CN(C 2 H 5 ) 2 ) 4 , (ii) high quantum yield from 20% to 80%, and (iii) broad absorption spectrum from UV light to visible light.…”

“…We adopted ZAIS (x = 0.4) (hereinafter referred to as simply "ZAIS"), whose luminescence peak is at 530 nm. ZAIS was prepared according to the procedure described in the literature [20]. PtTFPP and ZAIS can be excited with a single light source, because both luminophores commonly have absorption bands around 400 nm.…”

Facile synthesis of ZnS–CdIn2S4-alloyed nanocrystals with tunable band gap and its photocatalytic activity

“…This can be conveniently achieved through the precise control of composition in alloyed NCs even under a fixed size. To date, a great variety of alloyed NCs, such as Zn x Cd 1À x Se [4,5], Zn x Cd 1À x S [6], CuIn x Ga 1À x S 2 [7,8], CdZnSeS [9], ZnS-AgInS 2 [10], CuIn(S 1À x Se x ) 2 [11,12], ZnS-CuInS 2 [13], and CuInS 2 [14] have been extensively investigated. Among these alloyed NCs, quaternary alloy, especially for copper-based chalcogenides have revealed the promising prospect in photovoltaic devices than ternary analogs due to their greater flexibility in composition control and band gap modulation [15][16][17].…”

Nanostructure Engineering of Size-Quantized Semiconductor Particles for Photoelectrochemical Applications

“…1 nm. 47 By changing the Ag/In ratio in the precursor used, nonstoichiometric AgInS 2 nanoparticles were produced. 48 With an increase in the Ag/(Ag + In) ratio in the particles, E g of nonstoichiometric AgInS 2 particles was increased from 1.7 to 2.1 eV.…”