Remarkable Stability and Optoelectronic Properties of an All-Inorganic CsSn0.5Ge0.5I3 Perovskite Solar Cell

Wu, Zewei; Xu, Xin; Gao, Yujia; Lu, Zhengli; Cai, Yating; Qu, Yating; Li, Ang; Huang, Xi; Meng, Weiwei; Shi, Tingting; Liu, Pengyi

doi:10.1021/acs.jpclett.2c03220

Cited by 14 publications

(11 citation statements)

References 42 publications

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“…Yang et al also discovered that partially replacing Pb with Ge not only improved the PL efficiency but also enhanced the stability of perovskite thin films, particularly at certain proportions. These findings are supported by reliable experimental data. − Therefore, the unique role of germanium in the mixed system is crucial and warrants a systematic theoretical investigation.…”

Section: Introductionmentioning

confidence: 70%

“…Additionally, similar to CsGeBr 3 - R 3 m , the CsPb 0.5 Ge 0.5 Br 3 - P 1 space group exhibits a deviation of Ge ions from the center of the octahedron. It is well established ,− that both octahedral distortion and noncentrosymmetric deviations in the perovskite crystal structure contribute to the lowering of the structure’s energy value. This property implies that the P 1 space group exhibits the lowest total energy among the other three space groups with the same Pb/Ge ratio in the mixing system.…”

Section: Resultsmentioning

confidence: 99%

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Composition Engineering in CsPb_1–xGe_xBr₃ Perovskite Light-Emitting Diodes for Stable and Efficient Performance

Cai,

Wu,

Huang

et al. 2024

J. Phys. Chem. C

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Highly luminescent germanium−lead (Ge−Pb) perovskite device with good quantum efficiency was reported recently through tuning the optimal concentration of germanium. However, few theoretical investigations have studied the composition engineering in Ge−Pb-based CsPb 1−x Ge x Br 3 perovskites and the unique effect of Ge atoms on their optoelectronic properties. In this work, we investigated the structural evolution and optoelectronic properties of the CsPb 1−x Ge x Br 3 system using firstprinciples calculations. The result is that all lattice constants and band gaps of different space groups nearly follow a linear trend with increasing Ge atom ratios, except for the most stable P1 phase. More importantly, the modulation mechanism of band gap and the strength of antibonding coupling induced by Ge atoms were proposed to unravel the unusual effect of nontoxic Ge on structural and optoelectronic properties. In addition, spin−orbit coupling and Heyd-Scuseria-Ernzerhof hybrid functional (HSE06) methods were employed to further verify the band structures of three typical systems, including CsPbI 3 , CsGeBr 3 , and CsPb 0.5 Ge 0.5 Br 3 . Therefore, our work provides a fundamental understanding of the structural evolution of different phases and the changing trend of electronic properties of CsPb 1−x Ge x Br 3 perovskites with varying concentrations of Ge atoms, which provides an insightful strategy for designing perovskite optoelectronic devices with superior performance.

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Section: Introductionmentioning

confidence: 70%

Section: Resultsmentioning

confidence: 99%

Composition Engineering in CsPb_1–xGe_xBr₃ Perovskite Light-Emitting Diodes for Stable and Efficient Performance

Cai,

Wu,

Huang

et al. 2024

J. Phys. Chem. C

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“…This could mitigate charge recombination and enhance device stability [12]. CsSn 0.5 Ge 0.5 I 3 is a lead-free perovskite material with a strong potential for usage in solar cells [13]. It possesses a 1.5 eV bandgap, making it suitable for absorbing sunlight and turning it into energy [14].…”

Section: Introductionmentioning

confidence: 99%

Enhancing CsSn0.5Ge0.5I3 Perovskite Solar Cell Performance via Cu2O Hole Transport Layer Integration

Rayhan,

Khan,

Islam

2024

International Journal of Photoenergy

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Perovskite solar cells (PSCs) have emerged as a promising alternative to traditional silicon solar cells due to their low cost of fabrication and high power conversion efficiency (PCE). The utilization of lead halide perovskites as absorber layers in perovskite solar cells has been impeded by two major issues: lead poisoning and stability concerns. These hindrances have greatly impeded the industrialization of this cutting-edge technology. In light of the harmful effects of lead in perovskite solar cells, researchers have shifted their attention to exploring lead-free metal halide perovskites. However, the present alternatives to lead-based perovskite exhibit poor performance, thus prompting further inquiry into this matter. The primary objective of this research is to investigate the use of Cu2O as a hole transport layer in combination with lead-free metal halide perovskite (CsSn0.5Ge0.5I3) to achieve superior performance. Through meticulous experimentation, the suggested model has achieved outstanding results by optimizing several key variables. These variables include the thickness of the absorber layer (CsSn0.5Ge0.5I3), defect density, and doping densities, as well as the back contact work function and the operating temperature associated with each layer. The proposed FTO/PC60BM/CsSn0.5Ge0.5I3/Cu2O/Au solar cell structure surpassed prior configurations by comprehensively examining key aspects such as absorber layer thickness and defect density, doping densities, and back contact work. The structure has been also compared with multiple electron transport elements and concluded that the proposed model functions superior due to the use of PC60BM as an electron transport layer and it has an improved electron extraction procedure. Finally, the proposed model has achieved the optimized values as Jsc of 31.56 mA/cm-2, Voc of 1.12 V, FF of 81.47%, and PCE of 27.72%. As a consequence of this research, the investigated structure may be an excellent contender for the eventual creation of lead-free solar power cells made from perovskite.

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“…Some of the alternatives of Pb, such as Sn, Ge, Sb, Ca, Mg, and Ni, can be found in the literature. [12][13][14][15] Sn-based perovskite with an ideal bandgap of 1.3 eV is most suitable for photovoltaic applications. Besides, there are few reports regarding the toxic nature of Sn-based PSCs were also reported.…”

Section: Introductionmentioning

confidence: 99%

Optimizing the Efficiency of Lead‐Free Cs₂TiI₆‐Based Double Halide Perovskite Solar Cells Using SCAPS‐1D

Rehman,

Almousa,

Sahar

et al. 2023

Energy Tech

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Conventional lead halides perovskites have attracted much attention to become a next‐generation solar technology. Besides their low cost and excellent efficiency, high toxic nature and device instability become the major issue to limit their wide applications. Ti‐based (Cs2TiI6) double halide perovskite solar cells (PSCs) have emerged as a potential candidate to become the best alternate. However, poor device efficiency is still a restriction. Therefore, proper optimization and deep device analysis are needed to explore the full potential of Cs2TiI6‐based PSCs. In the present research work, the open‐circuit voltage (Voc), current density (Jsc), fill factor (FF), and power conversion efficiency of Cs2TiI6‐based PSC are successfully optimized. The device optimization is performed using the different combinations of electron transport layers and hole transport layers along with absorber thickness, acceptor doping density, and interface defect density. The effect of Rseries and Rshunt is explored and identified the best device efficiency of 28.07% along with other photovoltaic (PV) parameters; Voc = 1.41 V, Jsc = 22.44 mA cm−2, and FF = 88.15%, respectively. The supportive analysis of C–V and Mott–Schottky characteristics helps to get deep insight into the device's performance. Furthermore, the resultant PV parameters are compared to the previous studies as well.

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Remarkable Stability and Optoelectronic Properties of an All-Inorganic CsSn_0.5Ge_0.5I₃ Perovskite Solar Cell

Cited by 14 publications

References 42 publications

Composition Engineering in CsPb_1–xGe_xBr₃ Perovskite Light-Emitting Diodes for Stable and Efficient Performance

Composition Engineering in CsPb_1–xGe_xBr₃ Perovskite Light-Emitting Diodes for Stable and Efficient Performance

Enhancing CsSn0.5Ge0.5I3 Perovskite Solar Cell Performance via Cu2O Hole Transport Layer Integration

Optimizing the Efficiency of Lead‐Free Cs₂TiI₆‐Based Double Halide Perovskite Solar Cells Using SCAPS‐1D

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Remarkable Stability and Optoelectronic Properties of an All-Inorganic CsSn0.5Ge0.5I3 Perovskite Solar Cell

Cited by 14 publications

References 42 publications

Composition Engineering in CsPb1–xGexBr3 Perovskite Light-Emitting Diodes for Stable and Efficient Performance

Composition Engineering in CsPb1–xGexBr3 Perovskite Light-Emitting Diodes for Stable and Efficient Performance

Enhancing CsSn0.5Ge0.5I3 Perovskite Solar Cell Performance via Cu2O Hole Transport Layer Integration

Optimizing the Efficiency of Lead‐Free Cs2TiI6‐Based Double Halide Perovskite Solar Cells Using SCAPS‐1D

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Remarkable Stability and Optoelectronic Properties of an All-Inorganic CsSn_0.5Ge_0.5I₃ Perovskite Solar Cell

Composition Engineering in CsPb_1–xGe_xBr₃ Perovskite Light-Emitting Diodes for Stable and Efficient Performance

Composition Engineering in CsPb_1–xGe_xBr₃ Perovskite Light-Emitting Diodes for Stable and Efficient Performance

Optimizing the Efficiency of Lead‐Free Cs₂TiI₆‐Based Double Halide Perovskite Solar Cells Using SCAPS‐1D