Remote Doping of Scalable Nanowire Branches

Friedl, Martin; Cerveny, Kris; Huang, Chunyi; Dede, Didem; Samani, Mohammad; Hill, Megan O.; Morgan, Nicholas; Kim, Wonjong; Güniat, Lucas; Segura-Ruíz, Jaime; Lauhon, Lincoln J.; Zumbühl, Dominik M.; Morral, Anna Fontcuberta i

doi:10.1021/acs.nanolett.0c00517

Cited by 17 publications

(27 citation statements)

References 79 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The SAG approach has been used to successfully grow out-of-plane nanowires and nanofins as well as in-plane nanowires, nanomembranes, nanoprisms, nanorings, and quantum dots combining low-band-gap III-V and more exotic II-V materials with high-band-gap semiconductor substrates [9,10,13,14]. In-plane SAG of InAs and InSb nanowires attracts special attention for applications in quantum transport as controllable and scalable nanowire networks can be readily achieved [5,[15][16][17][18][19][20][21][22][23][24]. Since structures are already grown horizontally in plane of the substrate, it also simplifies their device processing.…”

Section: Introductionmentioning

confidence: 99%

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Beznasyuk

Martí‐Sánchez

Kang

et al. 2022

Phys. Rev. Materials

View full text Add to dashboard Cite

Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics, and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realised, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and nonuniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an In x Ga 1−x As buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high-quality InAs transport channels with the field-effect electron mobility over 10 000 cm 2 V −1 s −1 . This is twice as high as for nonoptimized samples and among the highest reported for InAs selective area grown nanostructures.

show abstract

Section: Introductionmentioning

confidence: 99%

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Beznasyuk

Martí‐Sánchez

Kang

et al. 2022

Phys. Rev. Materials

View full text Add to dashboard Cite

show abstract

“…This originates from statistical variations and size-dependent growth properties, which are amplified in the case of self-assembly. − Localized growth in predefined areas of a substrate constitutes one of the solutions to minimize these statistical variations. The growth sites can be defined by a regular array of metal particles catalyzing NW growth or by a patterned growth mask, resulting in selective area epitaxy. − A predefined distance between nanostructures guarantees the most similar growth conditions, given by the growth fluxes and modified by surface diffusion of species on the substrate. , Selective area epitaxy of NWs can result in freestanding or horizontally oriented structures, each configuration being suitable for different applications. ,− Freestanding vertical NWs are ideal for solar cell, light-emitting and photodetecting devices, while horizontal structures have opened new avenues for electronic devices, including quantum computing schemes. − …”

mentioning

confidence: 99%

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

et al. 2021

Self Cite

View full text Add to dashboard Cite

Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approach in which self-assembly is limited to reduced regions on a patterned silicon substrate. While nanowires grow with a wide distribution of diameters, we note a mostly binary occurrence of crystal phases. Self-catalyzed GaAs nanowires form in either a wurtzite or zincblende phase in the same growth run. Quite surprisingly, thicker nanowires are wurtzite and thinner nanowires are zincblende, while the common view predicts the reverse trend. We relate this phenomenon to the influx of Ga adatoms by surface diffusion, which results in different contact angles of Ga droplets. We demonstrate the wurtzite phase of thick GaAs NWs up to 200 nm in diameter in the Au-free approach, which has not been achieved so far to our knowledge.

show abstract

“…Gallium arsenide, the prototypical III-V semiconductor, has excellent electronic and optical properties, which have been thoroughly studied from both an experimental and theoretical point of view [1][2][3][4][5][6]. Recent technological advances in the synthesis of GaAs have allowed to move towards the miniaturization of devices [6][7][8][9], which in turn has opened the doors to the fine-tuning of their electronic properties for many applications, such as light and x-ray detectors [10][11][12], lasers [13], and topologically-protected qubits [14].…”

Section: Introductionmentioning

confidence: 99%

Modeling the Ga/As binary system across temperaturesand compositions from first principles

imbalzano,

Ceriotti

2021

Preprint

View full text Add to dashboard Cite

Materials composed of elements from the third and fifth columns of the periodic table display a very rich behavior, with the phase diagram usually containing a metallic liquid phase and a polar semiconducting solid. As a consequence, it is very hard to achieve transferable empirical models of interactions between the atoms that can reliably predict their behavior across the temperature and composition range that is relevant to the study of the synthesis and properties of III/V nanostructures and devices. We present a machine-learning potential trained on density functional theory reference data that provides a general-purpose model for the GaxAs1−x system. We provide a series of stringent tests that showcase the accuracy of the potential, and its applicability across the whole binary phase space, computing with ab initio accuracy a large number of finite-temperature properties as well as the location of phase boundaries. We also show how a committe model can be used to reliably determine the uncertainty induced by the limitations of the ML model on its predictions, to identify regions of phase space that are predicted with insufficient accuracy, and to iteratively refine the training set to achieve consistent, reliable modeling.

show abstract

Remote Doping of Scalable Nanowire Branches

Cited by 17 publications

References 79 publications

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

Modeling the Ga/As binary system across temperaturesand compositions from first principles

Contact Info

Product

Resources

About