Remote Epitaxy: Fundamentals, Challenges, and Opportunities

Park, Bo-In; Kim, Jekyung; Lu, Kuangye; Zhang, Xinyuan; Lee, Sangho; Suh, Jun Min; Kim, Dong-Hwan; Kim, Hyunseok; Kim, Jeehwan

doi:10.1021/acs.nanolett.3c04465

Nano Lett.

2024

DOI: 10.1021/acs.nanolett.3c04465

|View full text |Cite

Remote Epitaxy: Fundamentals, Challenges, and Opportunities

Bo-In Park,

Jekyung Kim,

Kuangye Lu

et al.

Abstract: Figure 4. Preservation of 2D materials under epitaxy environment. a, Schematic showing the damage to graphene layer under epitaxy environment, which is more severe under hydrogen environment than nitrogen, and on GaN substrates than AlN. 39 Adapted with permission from ref 39.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article4

Relationship

Self Cite0

Independent4

Authors

Journals

Cited by 4 publications

References 62 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures

Cheng,

Meng,

Luo

et al. 2024

Small

View full text Add to dashboard Cite

The strategic integration of low‐dimensional InAs‐based materials and emerging van der Waals systems is advancing in various scientific fields, including electronics, optics, and magnetics. With their unique properties, these InAs‐based van der Waals materials and devices promise further miniaturization of semiconductor devices in line with Moore's Law. However, progress in this area lags behind other 2D materials like graphene and boron nitride. Challenges include synthesizing pure crystalline phase InAs nanostructures and single‐atomic‐layer 2D InAs films, both vital for advanced van der Waals heterostructures. Also, diverse surface state effects on InAs‐based van der Waals devices complicate their performance evaluation. This review discusses the experimental advances in the van der Waals epitaxy of InAs‐based materials and the working principles of InAs‐based van der Waals devices. Theoretical achievements in understanding and guiding the design of InAs‐based van der Waals systems are highlighted. Focusing on advancing novel selective area growth and remote epitaxy, exploring multi‐functional applications, and incorporating deep learning into first‐principles calculations are proposed. These initiatives aim to overcome existing bottlenecks and accelerate transformative advancements in integrating InAs and van der Waals heterostructures.

show abstract

Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures

Cheng,

Meng,

Luo

et al. 2024

Small

View full text Add to dashboard Cite

show abstract

Route to Enhancing Remote Epitaxy of Perovskite Complex Oxide Thin Films

Lee,

Zhang,

Abdollahi

et al. 2024

ACS Nano

View full text Add to dashboard Cite

Remote epitaxy is taking center stage in creating freestanding complex oxide thin films with high crystallinity that could serve as an ideal building block for stacking artificial heterostructures with distinctive functionalities. However, there exist technical challenges, particularly in the remote epitaxy of perovskite oxides associated with their harsh growth environments, making the graphene interlayer difficult to survive. Transferred graphene, typically used for creating a remote epitaxy template, poses limitations in ensuring the yield of perovskite films, especially when pulsed laser deposition (PLD) growth is carried out, since graphene degradation can be easily observed. Here, we employ spectroscopic ellipsometry to determine the critical factors that damage the integrity of graphene during PLD by tracking the change in optical properties of graphene in situ. To mitigate the issues observed in the PLD process, we propose an alternative growth strategy based on molecular beam epitaxy to produce single-crystalline perovskite membranes.

show abstract

Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy

Henksmeier,

Mahler,

Wolff

et al. 2024

Commun Mater

View full text Add to dashboard Cite

Recently, remote epitaxy has been explored for the fabrication of freestanding semiconductor membranes and substrate re-use. For remote epitaxy a thin 2D material layer is either manually transferred to a substrate or grown directly on a substrate at high temperature, thus limiting the process scalability or the choice of substrates. Here, we report on the low-temperature deposition (300 °C) of ultrathin sp2-hybridized 2D amorphous carbon layers with roughness ≤0.3 nm on III-V semiconductor substrates by plasma-enhanced chemical vapor deposition as a universal template for remote epitaxy. We present growth and detailed characterization of 2D amorphous carbon layers on various host substrates and their subsequent remote epitaxial overgrowth by solid-source molecular beam epitaxy. We observe that a low-temperature nucleation step is favorable for nucleation of III-V material growth on amorphous carbon coated substrates. Under optimized preparation conditions, we obtain high-quality, single-crystalline GaAs, cubic-AlN, cubic-GaN and $${{\rm{I}}}{{{\rm{n}}}}_{{{\rm{x}}}}{{{\rm{Ga}}}}_{1-{{\rm{x}}}}{{\rm{As}}}$$ I n x Ga 1 − x As layers on GaAs, 3C-SiC and InP carbon-coated (001)-oriented substrates. Our results demonstrate a universal template fabrication process for remote epitaxy.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Remote Epitaxy: Fundamentals, Challenges, and Opportunities

Abstract: Figure 4. Preservation of 2D materials under epitaxy environment. a, Schematic showing the damage to graphene layer under epitaxy environment, which is more severe under hydrogen environment than nitrogen, and on GaN substrates than AlN. 39 Adapted with permission from ref 39.

Cited by 4 publications

References 62 publications

Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures

Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures

Route to Enhancing Remote Epitaxy of Perovskite Complex Oxide Thin Films

Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy

Contact Info

Product

Resources

About