2018
DOI: 10.1039/c8nr08084d
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Remote homoepitaxy of ZnO microrods across graphene layers

Abstract: Vertical and horizontal ZnO microrods are grown on a- and c-plane ZnO across graphene interlayer, owing to charge transfer through graphene, and the remote homoepitaxial microrods were exfoliated for substrate regeneration.

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Cited by 35 publications
(47 citation statements)
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“…[1][2][3] Several other studies have also demonstrated the facile detachment of a film taken as evidence of remote epitaxy. [4][5][6][7][8] Strictly speaking, however, the easy detachability may not necessarily originate from the 'remoteness' of the remote epitaxy, but simply indicates that the binding between the film and space layer/substrate is weaker than the adhesion of the film to a detacher such as a thermal release tape. In fact, the entire remoteness of the remote epitaxy across the interface has never been rigorously verified yet.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3] Several other studies have also demonstrated the facile detachment of a film taken as evidence of remote epitaxy. [4][5][6][7][8] Strictly speaking, however, the easy detachability may not necessarily originate from the 'remoteness' of the remote epitaxy, but simply indicates that the binding between the film and space layer/substrate is weaker than the adhesion of the film to a detacher such as a thermal release tape. In fact, the entire remoteness of the remote epitaxy across the interface has never been rigorously verified yet.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, the results of applying graphene at an interface similar to that of the homo-epitaxy have been reported using gallium arsenide (GaAs)/graphene/GaAs, 21 zinc oxide (ZnO)/ graphene/ZnO, 22 and strontium titanate (SrTiO 3 )/graphene/ SrTiO 3 ; 23 the structures of these materials are a result of the interaction between the grown material and the substrate. This structure (i.e., the 2-D material located between the same material) is called remote-epitaxy (RE); specically, the exfoliation of the overgrown material occurs as a result of the weak interaction at the interface, and the dislocation-free structure is caused by graphene transparency.…”
Section: Introductionmentioning
confidence: 99%
“… 19,20 However, the remaining dislocation density on vdWE is still a hurdle to achieving high-quality semiconductors. Recently, the results of applying graphene at an interface similar to that of the homo-epitaxy have been reported using gallium arsenide (GaAs)/graphene/GaAs, 21 zinc oxide (ZnO)/graphene/ZnO, 22 and strontium titanate (SrTiO 3 )/graphene/SrTiO 3 ; 23 the structures of these materials are a result of the interaction between the grown material and the substrate. This structure ( i.e.…”
Section: Introductionmentioning
confidence: 99%
“…Graphene provides novel opportunities for substrate recycling because of its self-terminated surface without surface dangling bonds, which usually act as origins of interfacial defects and strong chemical bonding between graphene and an overgrown material. Successful demonstrations of van der Waals epitaxy and remote epitaxy show that graphene is a versatile substrate for epitaxial growth of elemental and compound semiconductors [ 5 , 6 , 7 , 8 , 9 , 10 , 11 ]. ELO on graphene can protect the substrate underneath this 2D graphitic structure.…”
Section: Introductionmentioning
confidence: 99%