2022
DOI: 10.1088/1674-1056/ac032d
|View full text |Cite
|
Sign up to set email alerts
|

Removal of GaN film over AlGaN with inductively coupled BCl3/Ar atomic layer etch

Abstract: In this work, atomic layer etching (ALE) of thin film GaN (0001) is reported in detail using sequential surface modification by BCl3 adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a reactive ion etching system. The estimated etching rates of GaN were ~0.74 nm/cycle. The GaN was removed over AlGaN after 135 cycles. To study the mechanism of the etch, detailed characterization and analyses were carried out, including scanning electron microscope (SEM), X-ray photoelectro… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2023
2023
2023
2023

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
references
References 23 publications
0
0
0
Order By: Relevance