Removal of Ion Implanted Poly Vinyl Phenol using Wet Ozone

Abstract

We have investigated the removal of poly vinyl phenol (PVP) into which was B, P and As ions implanted with a dose of 5×10 13~5 ×10 15 atoms/cm 2 at 70keV, using wet ozone. Also, we investigated the thickness of altered layer of ion-implanted PVP using Secondary Ion Mass Spectrometry (SIMS). We investigated the chemical reactivity of wet ozone and ion-implanted PVP by FT-IR. The removability of ion-implanted PVP using wet ozone decreased with increasing dose because the degrees of alteration of benzene ring and O-H group increase with increasing dose. From the results of SIMS, the thickness of altered layer of B-ion-implanted PVP was 387nm, that of P-ion-implanted PVP was 232nm, and that of As-ion-implanted PVP was 142nm. However, the degree of alteration should increase in order of B, P and As, because any samples were implanted at same acceleration energy (70keV). FT-IR indicated that benzene ring content percentage was almost same at removed and not removed. On the other hand, in O-H group, there is a clear difference at removed and not removed, O-H group content percentage decreased drastically at implanted PVP with a dose of 5×10 14 atoms/cm 2 over. Therefore, the removability of ion-implanted PVP using wet ozone depends on O-H group content than that of benzene ring.

Scanning Removal of Ion-implanted Novolak Resist by using a Laser Irradiation

“…The dry process using ozone requires temperatures higher than 250 in order to generate oxygen radicals from the ozone though thermal decomposition. For this reason, the process using ozone may oxidize substrates and metal wiring [6,7,8].…”