In the rapidly progressing field of organometal halide perovskites, the dimensional reduction can open up new opportunities for device applications. Herein, taking the recently synthesized trimethylsulfonium lead triiodide (CH 3 ) 3 SPbI 3 perovskite as a representative example, first-principles calculations are carried out and the nanostructuring and device application of halide perovskite nanowires are studied. It is found that the 1D (CH 3 ) 3 SPbI 3 structure is structurally stable, and the electronic structures of higherdimensional forms are robustly determined at the 1D level. Remarkably, due to the face-sharing [PbI 6 ] octahedral atomic structure, the organic ligandremoved 1D PbI 3 frameworks are also found to be stable. Moreover, the PbI 3 columns avoid the Peierls distortion and assume a semimetallic character, contradicting the conventional assumption of semiconducting metal-halogen inorganic frameworks. Adopting the bundled nanowire junctions consisting of (CH 3 ) 3 SPbI 3 channels with sub-5 nm dimensions sandwiched between PbI 3 electrodes, high current densities and large room-temperature negative differential resistance (NDR) are finally obtained. It will be emphasized that the NDR originates from the combination of the near-Ohmic character of PbI 3 -(CH 3 ) 3 SPbI 3 contacts and a novel NDR mechanism that involves the quantum-mechanical hybridization between channel and electrode states. This work demonstrates the great potential of low-dimensional hybrid perovskites toward advanced electronic devices beyond actively pursued photonic applications.