Removal Rate Simulation of Copper Electrochemical Mechanical Planarization

Abstract

An improved material removal rate method for simulating the Cu removal rate in electrochemical mechanical planarization (ECMP) based on the dissolution-type polishing mechanism was developed. The effects of the applied anodic potential, the Cu dissolution amount and the protective layer amount formed during ECMP process on the Cu removal rate are considered in this method. The protective layer amount and Cu dissolution amount were modeled using three simple equations, which were modeled on the basis of the dissolution-type polishing mechanism. This method is used to simulate the material removal rate in a rotary-type ECMP system. This understanding is beneficial for optimization of ECMP processes.