Removing plasma-induced sidewall damage in GaN-based light-emitting diodes by annealing and wet chemical treatments

Yu, Yang; Cao, X. A.

doi:10.1116/1.3244590

Cited by 66 publications

(39 citation statements)

References 21 publications

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“…Dry etching can finally be taken into account as an elaborate form of surface damaging. Yang and co‐workers applied wet etching to remove material residues from previous plasma etching . Surface leakage currents were reduced by this treatment.…”

Section: Dark Wet‐chemical Etching Of N‐gan In Aqueous Koh Solutionsmentioning

confidence: 99%

Wet‐Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production

Tautz

Díaz

2018

ChemistrySelect

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Gallium nitride (GaN) is the key material for the fabrication of blue and white light emitting diodes (LEDs). Etching of this material is applied to improve the light extraction efficiency of the product. Wet‐chemical etching of GaN is commonly carried out by treatment with aqueous KOH solution at elevated temperature. Thereby, the anisotropic etching results in a highly rough surface. Hence, a remarkably higher out‐coupling possibility of generated photons is feasible. On the other hand, anisotropy generally prohibits the application of a predictable and standardized etching process. In this review, both material‐ and process‐dependent influences on the etching performance in aqueous KOH solution are classified. Herein, we critically present the factors that affect the etching rate of GaN. Moreover, the etching mechanism at the molecular level and the generation of anisotropy from the hexagonal crystal lattice are discussed. The existing gaps in the current understanding of this process maintain the field still open for further research aligned to a permanent interest of the electronic industry.

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Section: Dark Wet‐chemical Etching Of N‐gan In Aqueous Koh Solutionsmentioning

confidence: 99%

Wet‐Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production

Tautz

Díaz

2018

ChemistrySelect

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“…22,23 Hence, the long NBE results in additional degradation of Q-factor that appeared in the increase of dE ds . At this point, microcantilever thickness was approximately 850 nm.…”

Section: Resultsmentioning

confidence: 99%

Effect of neutral beam etching on mechanical property of microcantilevers

Nishimori

Ueki

Miwa

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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As an effective application of neutral beam etching (NBE) to microelectromechanical systems (MEMS), here we propose a combination of conventional plasma processes and NBE to remove plasma-induced damage. To evaluate the effect of the combined approach quantitatively, we measured the resonance properties of a microcantilever before and after NBE treatment and compared them with a characteristic quantity. The thickness of the damage layer times the imaginary part of the complex Young's modulus (δEds), which is a parameter of surface damage. Although a plasma process makes the damaged surface of the microcantilevers during their fabrication, the removal of that damage by NBE is confirmed as a reduction in δEds. NBE can provide a damage-free surface for MEMS devices without a high-temperature annealing process.

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“…In other words, no significant difference in the electrical properties was observed in VLED_A, _B, and _C compared with the flat-surface and rough-surface VLEDs. These results indicate that the use of the ICP-I conditions to form the CNAs has a negligible influence on the electrical characteristics because the surface treatments with BOE and 0.5-mol KOH solutions minimize the ICP-induced etching damage [13,14]. The leakage currents were about 0.86, 0.93, and 1.28 μA for VLED_D, _E, and _F, respectively.…”

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confidence: 92%

Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures

Kim

Chung

et al. 2014

Opt. Lett.

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We investigated GaN-based vertical light-emitting diodes (VLEDs) with periodic and conical nanopillar arrays (CNAs) to improve the light-output efficiency. We found that a 470 nm diameter and 0.8-0.9 μm height increased the light output, and the devices suffered no significant electrical property degradations. The light-output power was 272% and 5.1% greater than flat- and rough-surface VLEDs at 350 mA, respectively. These improved optical properties are attributed to the optimized CNAs, which increase the effective photon escape cone and reduce the total internal reflection at the n-GaN-air interface. We also investigated the emission characteristics and mechanisms with finite-difference time-domain simulations.

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Removing plasma-induced sidewall damage in GaN-based light-emitting diodes by annealing and wet chemical treatments

Abstract: Articles you may be interested inLaser direct writing of GaN-based light-emitting diodes-The suitable laser source for mesa definition

Cited by 66 publications

References 21 publications

Wet‐Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production

Wet‐Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production

Effect of neutral beam etching on mechanical property of microcantilevers

Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures

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