“…It can be optimized by laser cavity design or improved by multi-section cavity layout and laser biasing [24]- [27], passive electrical stabilization [28], [29] or by external control including active mode-locking [30]- [33], electrical modulation or hybrid mode-locking [31], [34], single-and dual-mode injection [35], [36] or mutual synchronization [37]. Self-injection by single passive external cavities [2], [4], [17], [20], [38]- [44] allows to effectively control the IBF and IBLW of mode-locked semiconductor lasers in a frequency range depending on the length of the external cavity [44]. Optical self-injection (OSI) however induces time-delay signature sidebands in the radio-frequency (RF) spectrum which on the other hand can be effectively suppressed by dualcavity OSI as suggested experimentally [45], [46] and confirmed theoretically by modeling [46]- [48].…”