Repetition rate pulsed power technology and its applications:(ⅵ) Typical applications

Weihua, 江伟华 Jiang

doi:10.3788/hplpb20142603.30201

Cited by 3 publications

(1 citation statement)

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“…Pulse power technology has developed rapidly, and its application fields have been continuously expanding and widely applied in biomedicine [1][2][3][4][5], plasma material processing [6][7][8], high-power power supplies [9], accelerator [10], and other fields [11][12][13]. As one of the core devices of pulsed power systems, switching devices have received much attention.…”

Section: Introductionmentioning

confidence: 99%

A novel high‐voltage solid‐state switch based on the SiC MOSFET series and its overcurrent protection

Sun

Liao

et al. 2022

High Voltage

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All‐solid‐state switches are one of the core components of pulsed power supply systems. However, the voltage level of a single switch is limited. By optimizing the chip structure, the voltage level of a single switch can be improved. Due to the immaturity of the production process and the positive correlation between the blocking voltage and the on‐resistance of the switch, it is difficult to improve the blocking voltage and the continuous forward current of a single switch simultaneously. The series‐connected switch is a way to increase the switch's blocking voltage without reducing the switch's continuous forward current. Magnetically coupled isolated drive and resistor‐capacitor forced voltage equalization techniques are investigated to increase the blocking voltage of the switches using multiple SiC metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) in series connections. Meanwhile, a special overcurrent protection scheme is designed to improve the reliability of the series‐connected switch. Finally, a high‐voltage solid‐state switch is developed based on the SiC MOSFET series connections, whose output pulse width is adjustable from 20 to 300 μs, frequency is adjustable from 1 Hz to 3 kHz, the maximum output voltage can reach 57 kV (1 Hz), and the overcurrent protection time is about 1 μs.

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Section: Introductionmentioning

confidence: 99%

A novel high‐voltage solid‐state switch based on the SiC MOSFET series and its overcurrent protection

Sun

Liao

et al. 2022

High Voltage

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Investigation of the propagation of a gigawatt pulsed electron beam in compositions of high-pressure gas

et al. 2014

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The paper presents the results of the experimental investigation of pulsed electron beam propagation with a varying current density (electron energy Ee = 350–400 keV; total current of a diode Ie up to 11 kA; (half-amplitude) pulse duration t = 60 ns, pulse energy We up to 120 J) in two- and three-component gas compositions used in the pulsed plasma chemical synthesis of nanosized oxides. The mean value of the specific absorbed energy within the zone of pulsed electron beam propagation with a current density of 0.05–0.06 kA/cm2 in gas compositions has been determined.

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A Pulse Generation Circuit Based on Series Hybrid Energy Storage

Ren,

Yan,

Jiang

et al. 2024

IEEE Trans. Plasma Sci.

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Repetition rate pulsed power technology and its applications:(ⅵ) Typical applications

Cited by 3 publications

References 0 publications

A novel high‐voltage solid‐state switch based on the SiC MOSFET series and its overcurrent protection

A novel high‐voltage solid‐state switch based on the SiC MOSFET series and its overcurrent protection

Investigation of the propagation of a gigawatt pulsed electron beam in compositions of high-pressure gas

A Pulse Generation Circuit Based on Series Hybrid Energy Storage

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