Reply to the Comments by J. B. M. M. Eggen, M. P. H. Weenink and W. Schuurman

Oshiyama, Hiroshi; Goto, Masahiko

doi:10.1143/jpsj.56.2991

Cited by 2 publications

(2 citation statements)

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“…The diode performance recovers during thermal annealing [20]. In order to confirm the influence of electron capture level on the degradation of diode performance, the recovery behaviour of the performance and the electron capture level can be compared.…”

Section: Resultsmentioning

confidence: 99%

Influence of germanium content on the degradation of strained Si1−xGex epitaxial diodes by electron irradiation

Ohyama

Vanhellemont

Sunaga³

et al. 1994

Phys. Stat. Sol. (a)

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The degradation of strained n+‐Si/p+‐Si1−xGex epitaxial diodes, which are irradiated at room temperature with 1 MeV electrons in a high‐voltage transmission electron microscope, is investigated. Special attention is given to the influence of the germanium content on the degradation of electrical characteristics and on the introduction of lattice defects into the epitaxial layer. The diode degradation and the deep level density for the x = 0.12 diodes are larger than for the x = 0.16 diodes. This can be explained by the fact that germanium atoms act as recombination centres for vacancies and interstitials thus decreasing the generation rate of stable radiation defects and by the fact that the energy absorbed in the epitaxial layer during irradiation decreases with increasing germanium content due to the smaller stopping power of germanium atoms.

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Section: Resultsmentioning

confidence: 99%

Influence of germanium content on the degradation of strained Si1−xGex epitaxial diodes by electron irradiation

Ohyama

Vanhellemont

Sunaga³

et al. 1994

Phys. Stat. Sol. (a)

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“…Both reports of phenylimidazolinato complexes do not deal with the blue phosphor, and there is no report of homoleptic complexes. However, there are some patents of phenylimidazolinato complexes [61][62][63][64][65][66], such as that applied by Konica-Minolta in 2006 [61].…”

Section: Blue Phosphorescent Cyclometalated Iridium (Iii) Complexes Amentioning

confidence: 99%

Materials for Organic Light Emitting Diode (OLED)

Karatsu

2014

Electronic Processes in Organic Electronics

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Iridium complexes have a wide range of applications such as photocatalysts to reduce carbon dioxide [1], imaging reagents for living cells [2], and oxygen sensors [3]. In particular, organic light emitting diodes (OLED) is one of important industrial application for iridium complexes, due to their high phosphorescent efficiency at ambient temperature [4,5]. OLEDs have many advantages, including self-emission (no backlight required), an almost 180 wide view angle, light weight, thin (<2 mm), quick response (1,000 times faster than LCD), high contrast, and can be fabricated on flexible plastic substrates.In 1987, Tan et al. reported the potential of OLEDs using tris (8-hydroxyquinolinato) aluminium (III) (Alq 3 ) [6]. Before them, the OLED device has simple configuration that has single organic crystal sandwiched by two electrodes. They introduced concept of OLED device configuration composed of multiple thin layers (Fig. 11.1). Here, each layer has an exact function, such as charge transporting and emitting abilities. The external efficiency of this OLED device was 1 %, which meant an internal efficiency of 5 %, because the output efficiency from the device was approximately 20 % [7]. After charge (hole and electron) injection into the emitting layer, 25 % singlet and 75 % triplet excitons are generated by charge recombination. Therefore, the only usable amount of fluorescence is 25 %. If phosphorescent materials can be used, then the 75 % triplet excitons are usable. In addition, the triplet excited state has lower energy than the singlet excited state; therefore, there is a chance that intersystem crossing of singlet excited state to the triplet excited state could occur.

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Reply to the Comments by J. B. M. M. Eggen, M. P. H. Weenink and W. Schuurman

Cited by 2 publications

References 0 publications

Influence of germanium content on the degradation of strained Si1−xGex epitaxial diodes by electron irradiation

Influence of germanium content on the degradation of strained Si1−xGex epitaxial diodes by electron irradiation

Materials for Organic Light Emitting Diode (OLED)

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