Reply to the comments of A. Rosental on “unipolar interface-charge-limited current” by M-A. Nicolet, V. Rodriguez and D. Stolfa

Nicolet, M.‐A.; Rodriguez, Valentin; Stolfa, D. L.

doi:10.1016/0039-6028(69)90143-5

Cited by 7 publications

(8 citation statements)

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“…The validity of (2) a s a good approximation formula is affirmed by the result j -L low U, since the second t e r m of (2) should be dominating here. Such L ences of j a r e reported also in the literature (8,9). At higher voltage the first t e r m of (2) is dominating and the U / L dependence of the current density as given by (1) is observed.…”

supporting

confidence: 76%

The effect of diffusion on space charge currents in insulators

Thoma

1973

Phys. Stat. Sol. (a)

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The influence of the thermal diffusion on the current-voltage characteristics i(U) of insulators with ohmic electrodes is generally believed to be negligible. i(U)-curves being linear in U a r e expected at low acting voltages U. Some considerations regarding diffusion (1 to 3) give implicit i(U)-relations only. Weakly non-linear curves a r e measured generally, but also steeply rising, non-linear and diffusion-governed curves a r e reported (4) and discussed using quite different models (5, 6). The present results show a change of diffusion conditions by small temperature differences between the electrodes and a correspondingly large influence on i(U)-curves. Electron injecting (non-transparent) Ga, Al, o r In electrodes were evaporated onto cylindrical and pure ZnS crystals (Id = 10 mm, thickness L = 2/10, 1/2, and 1 mm) being cut from a large bulb in a parallel plate arrangement. The electrode temperatures could independently be stabilized and controlled at equal o r different values between 18 and 30 OC. The samples were mounted into a vacuum vessel. Fig. 1 , curve a , shows an i(U)-curve between 0 . 2 and 2.5 V in small steps, measured with both electrodes at 20 C. Curve b shows a characteristic of an equally sized sample with a constant temperature of 30 C of the positive electrode whereas the negative electrode is kept at 20 OC. If in contrast to this the negative electrode is kept at 30 C and the positive one at 20 C, curve c is found.The results a r e reproducible at identical conditions besides small deviations. This is also the case, if the measurements were made using different but equally sized samples in order to exclude any effects of formerly trapped charges. These experiments were repeated using other temperatures. There is a close correspondence of the results for crystals of different L. Between 0 . 2 and 1 eV i is proportional to L . Curve b is only observed if the positive electrode injects more charge than the negative one on thermal or any other reasons. If the larger space charge cloud is located at the positive side, a reduced current is observed folluwed 0 0 0 0

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supporting

confidence: 76%

The effect of diffusion on space charge currents in insulators

Thoma

1973

Phys. Stat. Sol. (a)

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“…Nicolet has predicted that amorphous Ta may be metastable under some circumstances. 15 Chemically, the Ta films were analyzed using Auger electron spectroscopy ͑AES͒, x-ray photoelectron spectroscopy ͑XPS͒, and Rutherford backscattering spectroscopy ͑RBS͒. However, no analysis has been possible in situ: all films have been exposed to air for extended periods prior to analysis.…”

Section: Resultsmentioning

confidence: 99%

Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers

Rossnagel¹,

Sherman²,

Turner³

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

163

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Robust Ta N x diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition J. Appl. Phys. 98, 014308 (2005); 10.1063/1.1935761 Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition J. Appl. Phys. 92, 7080 (2002); 10.1063/1.1519949Tantalum and tantalum nitride films deposited by electron cyclotron resonance sputtering as barriers to copper diffusion J.Thin films of inert, refractory materials are used in semiconductor interconnect applications as diffusion barriers, seed, and adhesion layers. A typical example is the use of a thin, conformal Ta or Ti/TiN films on the walls of a dielectric trench or via which reduces or eliminates out-diffusion of the primary conductor, usually Cu, into the dielectric. Atomic layer deposition is a known technique which is intrinsically conformal and is appropriate for this application. Plasma enhancement of the process allows deposition at significantly lower temperatures than conventional chemical vapor deposition, which is a requirement for low-k dielectrics. Tantalum films deposited at 25-400°C using ALD with a TaCl 5 precursor and atomic hydrogen as the reactive species at up to a rate of 1.67 Ang/cycle are amorphous, conformal, and show moderate or controllable levels of impurities; primarily oxygen and a small level of Cl. Similar results have been observed for Ti using TiCl 4 as a precursor. The process scales to manufacturing dimensions and applications and will facilitate the extension of interconnect technology beyond ͑below͒ 100 nm dimensions.

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“…The latter encompass di †use interstellar clouds (Swings & Rosenfeld 1937 ;McKellar 1940aMcKellar , 1940b, comets (Nicolet 1938 ;Dufay 1940), and stellar atmospheres, including that of the Sun (Stenvinkel, Svensson, & Olsson 1938 ;Wildt 1941 ;Babcock 1945). Later, CH in dark interstellar clouds was detected by radioastronomy using "-doublet transitions of the X 2% ground state (Rydbeck, & Ellde r, Irvine 1973 ;Turner & Zuckerman 1974).…”

Section: Introductionmentioning

confidence: 96%

Assignment of the λ1369.13 Diffuse Interstellar Absorption Band and Three Other Far‐Ultraviolet Interstellar Absorption Lines to the CH Molecule

Watson

2001

ApJ

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The three unidentiÐed interstellar lines jj1368. 74, 1369.13, and 1370.87 are here assigned to the CH molecule, including the di †use interstellar band (DIB) at 1369.13 A consistent rotational assignment A . of the interstellar lines and the 3dÈX 2% laboratory spectrum is presented. The predominant broadening mechanism of the lines appears to be predissociation, which is found to be greater for lines with upper levels of d parity, including the DIB, than for lines with upper levels of c parity. The oscillator strength of the 3dÈX 2% transition is estimated to be f B 0.033. Using the theoretical n* dependence of the parameters together with the wavenumber of the observed laboratory Q-form branch, an unidentiÐed interstellar line at 1270.96 is assigned to the strongest line of the 4dÈX 2% transition of CH.A Subject headings : ISM : lines and bands È ISM : molecules È methods : laboratory È molecular data È ultraviolet : ISM

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Reply to the comments of A. Rosental on “unipolar interface-charge-limited current” by M-A. Nicolet, V. Rodriguez and D. Stolfa

Cited by 7 publications

References 0 publications

The effect of diffusion on space charge currents in insulators

The effect of diffusion on space charge currents in insulators

Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers

Assignment of the λ1369.13 Diffuse Interstellar Absorption Band and Three Other Far‐Ultraviolet Interstellar Absorption Lines to the CH Molecule

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