High-resolution photoemission, thermal desorption mass spectroscopy, and first-principles density-functional slab calculations were used to study the interaction of sulfur with a TiC͑001͒ surface. At small coverages ͑Ͻ0.3 ML͒, atomic sulfur is present on the TiC͑001͒ substrate. A saturated overlayer at 300 K contains S and molecular S 2 . For 100-K deposition, a multilayer of sulfur can be grown and it contains S 8 , S 4 , and S 2 species. These species desorb at temperatures between 250 and 500 K, leaving only atomic sulfur on the carbide surface. The adsorption of sulfur ͑0.3-0.8 ML͒ induced small positive shifts ͑0.1-0.25 eV͒ in the Ti 2p core levels, while a big positive shift ͑1.0-1.3 eV͒ was detected for the C 1s core level. These photoemission studies indicate the existence of strong S↔C interactions. A phenomenon corroborated by the results of first-principles calculations, which show a CTiTi hollow as the most stable site for the adsorption of sulfur. The S↔C interactions determine the type of sulfur species present on the surface. In general, the bond between S and the TiC͑001͒ surface is best described as covalent, with a small degree of ionic character. The deposition of sulfur induces a significant reduction in the Ti density of states near the Fermi level.