ReS₂‐Based Field‐Effect Transistors and Photodetectors

Abstract

Atomically thin 2D layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, the fabrication of ReS2 field‐effect transistors is reported via the encapsulation of ReS2 nanosheets in a high‐κ Al2O3 dielectric environment. Low‐temperature transport measurements allow to observe a direct metal‐to‐insulator transition originating from strong electron–electron interactions. Remarkably, the photodetectors based on ReS2 exhibit gate‐tunable photoresponsivity up to 16.14 A W−1 and external quantum efficiency reaching 3168%, showing a competitive device performance to those reported in graphene, MoSe2, GaS, and GaSe‐based photodetectors. This study unambiguously distinguishes ReS2 as a new candidate for future applications in electronics and optoelectronics.

Cleavage tendency of anisotropic two-dimensional materials:ReX2(X=S,Se) andWang1, Liu2, Wang3 et al. 2017Phys. Rev. B611470View full textAdd to dashboardCite

“…This study is in good agreement with our experiment results. As shown in Figure 1 By comparing to ReX2, WTe2 has shown many similarities, including the same distorted 1T lattice structure, similar anisotropic electronic, optical, vibrational and thermal dynamical properties [8,9,11,[16][17][18][19][20][21][22][23][24][25]. Both materials exhibit metal atom chains along one of the principle axes as shown in Figure 2 and Figure 4.…”

“…Due to the low lattice symmetry and unique band structures, ReX2 show pronounced in-plane anisotropic properties with possible device applications. For example, few-layer ReX2 sheets have been demonstrated as channel materials for field effect transistors [8,9,11], integrated digital inverters [9] and photodetectors [11,16,17].…”

“…Recently, much research interest has been focused on a new type of 2D-TMDs with low symmetry: rhenium disulfide (ReS2) and rhenium diselenide (ReSe2) (denoted as ReX2) [7][8][9][10][11][12][13][14][15][16][17], both of which exhibit a distorted octahedral phase (denoted as Td). Due to the low lattice symmetry and unique band structures, ReX2 show pronounced in-plane anisotropic properties with possible device applications.…”

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

“…For TMDCs, single channel photodetectors, CVD synthesis with solid-phase metal oxide and sulfur precursors are widely used because of the easy synthesis approach, large single crystal domain, and high mobility. Photodetectors based on CVD MoS 2 [113,131], MoSe 2 [132,133], ReS 2 [63,114], ReSe 2 [134], SnS 2 [135,136], SnSe 2 [137], and WS 2 [110,122] have been studied recently. Jing et al reported a MoS 2 phototransistor array that can detect room light illumination [138].…”

“…The photoconductive gain, typically induced by the trapping of charge carrier, can provide response to optical signals with frequencies ranging between 1 kHz to 3 kHz (Figure 5a,b) [100]. The time constant of TMDCs and the BP single channel photodetector is commonly between several milliseconds to hundreds of seconds (one example of WS 2 photodetector shown in Figure 5c,d) [10,[112][113][114][115][116][117]. Hence, these photodetectors can be potentially applied in a low light intensity and frequency device, while photo-electron gain is mainly contributed by the photovoltaic effect when the time constant is large.…”