Research electrical properties of Cu doped FeTe₂ prepared by solid state reaction

Abstract

The present study successfully prepared CuxFeTe2 (x=0.01, 0.05, 0.1, 0.15, and 0.2) compounds using a high-temperature solid state reaction sintering technique under preparation conditions ranging from 623 K to 823 K. The phase structure and microstructure of CuxFeTe2 were determined using X-ray diffraction and scanning electron microscopy. Simultaneously, we studied the Seebeck coefficient and electrical resistivity of the sample. It was found that the samples prepared at 673 K had a purer phase, and the thermal power coefficient was better for samples with a Cu doping concentration below 0.1.