Research into effect of electrochemical etching conditions on the morphology of porous gallium arsenide

Vambol, Sergij; Богданов, Ігор Тимофійович; Vambol, Viola; Suchikova, Yana; Lopatina, Hanna; Tsybuliak, Natalia

doi:10.15587/1729-4061.2017.118725

Cited by 21 publications

(14 citation statements)

References 47 publications

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“…Data on the surface inhomogeneity and composition were obtained in the back-scattered electron (BEC) mode. The energy of the electron beam was chosen in the range of (10)(11)(12)(13)(14)(15) keV. The elemental composition of the samples was determined using an energy-dispersive spectrometer at an acceleration voltage of (15)(16)(17)(18)(19)(20) kV and a beam current of (1-3) nA.…”

Section: Methodsmentioning

confidence: 99%

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About synthesis mechanism of periodic oxide nanocrystallites on surface of single-crystal InP

Ковачов

Bohdanov

Бардус

et al. 2023

Phys. Chem. Solid St.

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We have obtained unique periodic oxide nanocrystallites on the surface of indium phosphide. The morphological characteristics of the structures obtained and their component composition are investigated in the article. The main attention is focused on explaining the mechanism of the periodic structures, which are packed by the ‘parquet floor’ type. The mechanism based on sliding the sources of rectangular-shaped dislocation loops has been proposed. The system of the main and secondary (ingoing) dislocations that cause the formation of the steps has been considered. The mathematical interpretation of the described model has also been proposed.

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Section: Methodsmentioning

confidence: 99%

“…In recent times, the attention of researchers is focused on the materials with the surface architecture [9,10]. Today, nanoneedles [11], nanowhiskers [12], flower-shaped structures [13], porous surfaces [14,15], etc., are successfully synthesized. Furthermore, periodic structures are gaining in considerable popularity [16,17].…”

Section: Introductionmentioning

confidence: 99%

About synthesis mechanism of periodic oxide nanocrystallites on surface of single-crystal InP

Ковачов

Bohdanov

Бардус

et al. 2023

Phys. Chem. Solid St.

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“…Прикладом цього можуть слугувати сонячні елементи, створені на основі наноструктурованих напівпровідників [5]. Крім того, розмірне квантування, що виникає під час переходу до наномасштабів, уможливлює зсунути піки фотолюмінесценції у короткохвильову частину спектру [6]. Це уможливлює застосовувати такі структури у лазерних технологіях [7].…”

Section: вступunclassified

Correlation between Technological Factors of Synthesis of por-GaP and Its Acquired Properties

2018

Nanosist. Nanomater. Nanotehnol.

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 2018 ІÌÔ (Інститут металофізики ім. Ã. В. Курдюмова НÀН Óкраїни) Надруковано в Óкраїні. Ôотокопіювання дозволено тільки відповідно до ліцензії Ключові слова: фосфід ґалію, електрохемічне щавлення, морфологія, поруваті напівпровідники, умови щавлення.

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“…Technologies for the use of binary semiconductors have also become widespread [9,10]. Semiconductors of the A3B5 group, namely InP [11,12], GaAs [13,14] and GaP [15,16] have become the main materials in the laser [17,18] and sensor [19,20] industries. They are also widely used in solar energy [21,22].…”

Section: Introductionmentioning

confidence: 99%

Nanostructures on the ZnSe Surface: Synthesis, Morphological and Photoluminescent Properties

Suchikova

Lazarenko

Ковачов

et al. 2021

Phys. Chem. Solid St.

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Nanostructured zinc selenide has been obtained by electrochemical etching with an H2SO4:H2O:H2O5OH=4:1:1 solution used as the electrolyte. The experiment has indicated that the surface consists of two phases, namely the upper layer made up of a dense oxide film and a low-sized porous layer underneath, with a pore diameter of (30-80) nm and a thickness of interporous walls of (15-50) nm. The investigated dependence of surface porosity on the etching time allows us to explain the main stages of the crystal’s electrochemical dissolution during anodizing. The experiment has indicated the presence of three main stages, such as the formation of the Gouy and Helmholtz layers at the semiconductor/electrolyte segregation; pore formation at defect and oxide crystallite locations; spontaneous pore formation. The PL spectra of the samples under study have demonstrated three maxima. The emission band at 2.45 eV is attributable to the presence of oxides, the band at 2.78 EV can be accounted for the corresponding excitons while the band at 2.82 eV stems from quantum-dimensional effects. Chemical analysis of the samples has also indicated the presence of oxides on the surface of the nanostructure.

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Research into effect of electrochemical etching conditions on the morphology of porous gallium arsenide

Cited by 21 publications

References 47 publications

About synthesis mechanism of periodic oxide nanocrystallites on surface of single-crystal InP

About synthesis mechanism of periodic oxide nanocrystallites on surface of single-crystal InP

Correlation between Technological Factors of Synthesis of por-GaP and Its Acquired Properties

Nanostructures on the ZnSe Surface: Synthesis, Morphological and Photoluminescent Properties

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