“…[40] (j) Schematic and physical images for SQHG devices fabricated by anodic bonding: (I) Schematic diagram of SQHG devices; (II) Optical image of the device; (III) Physical images of different parts. [41] (k) Wafer-level anodic bonding for hermit vapor cells. [42] (l) Capacitive MEMS sensors packaged by anodic bonding method.…”
Section: Wafer Direct Bonding Of Si-based Materials For Mems Devicesmentioning
confidence: 99%
“…Xin Guo et al from Southeast University has ever used the anodic bonding for their device packaging. [41,59] In a novel stereoscopic symmetrical quadruple hair gyroscope (SQHG), excellent performances of an angular rate sensitivity of 16.03 mV/deg/s and a bias instability of 16.26 /h at room temperature have been achieved. [60] The schematic and physical diagrams are presented in Figure 2(j).…”
Section: Wafer Direct Bonding Of Si-based Materials For Mems Devicesmentioning
“…[40] (j) Schematic and physical images for SQHG devices fabricated by anodic bonding: (I) Schematic diagram of SQHG devices; (II) Optical image of the device; (III) Physical images of different parts. [41] (k) Wafer-level anodic bonding for hermit vapor cells. [42] (l) Capacitive MEMS sensors packaged by anodic bonding method.…”
Section: Wafer Direct Bonding Of Si-based Materials For Mems Devicesmentioning
confidence: 99%
“…Xin Guo et al from Southeast University has ever used the anodic bonding for their device packaging. [41,59] In a novel stereoscopic symmetrical quadruple hair gyroscope (SQHG), excellent performances of an angular rate sensitivity of 16.03 mV/deg/s and a bias instability of 16.26 /h at room temperature have been achieved. [60] The schematic and physical diagrams are presented in Figure 2(j).…”
Section: Wafer Direct Bonding Of Si-based Materials For Mems Devicesmentioning
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