Research of acceptor impurity thermal activation in GaN: Mg epitaxial layers

Мазалов, А. В.; Сабитов, Д. Р.; Курешов, В. А.; Падалица, А. А.; Marmalyuk, Aleksandr A.; Акчурин, Р. Х.

doi:10.1016/j.moem.2016.09.003

Cited by 9 publications

(2 citation statements)

References 6 publications

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“…Рост легирования Mg ограничен самокомпенсацией примеси Mg [45,46]; образованием дефектов донорного типа на основе Mg (Mg i −V N , Mg Ga −V N ). Выбор оптимальных условий легирования и режима отжига важен для синтеза эпитаксиальных слоев p-GaN с низким сопротивлением [47].…”

Section: обсуждение результатовunclassified

Деградация ультрафиолетовых светодиодов с квантовыми ямами InGaN/GaN, вызванная кратковременными воздействиями током

Иванов¹,

Клочков²

2022

Журнал Технической Физики

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A comparative analysis of the initial stages of degradation of ultraviolet and blue LED structures with InGaN / GaN quantum wells is carried out. In the mode of accelerated aging, the structures were subjected to short-term, sequential exposure to currents of 80–190 mA at forward bias. The exposure time did not exceed three hours. There was an increase (up to 20%) in the external quantum efficiency. The most probable physical mechanisms explaining the changes in InGaN / GaN LEDs are presented and possible ways to slow down the aging of UV LEDs are outlined.

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Section: обсуждение результатовunclassified

Деградация ультрафиолетовых светодиодов с квантовыми ямами InGaN/GaN, вызванная кратковременными воздействиями током

Иванов¹,

Клочков²

2022

Журнал Технической Физики

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“…have been rapidly developed, began to enter the commercial market. [26][27] In general, the achievements in P-GaN research in recent years can be roughly divided into the following categories: [28][29][30][31][32][33][34][35][36][37][38][39][40][41] Hull and Chung et al studied the role of O 2 in the annealing atmosphere during P-GaN annealing. Among them, the latter compared the effect of annealing in N 2 atmosphere with annealing temperature Nakagawa et al also studied the annealing of P-GaN films under N 2 and O 2 atmospheres, and replaced the H in the NH3 atmosphere of the epitaxial layer cooling process with deuterium (D).…”

Section: P-type Gan Materials Has a Low Carrier Concentration Due To ...mentioning

confidence: 99%

P-type Doping of Broad-band Nitride Semiconductors

Liu¹,

Cai²,

Liu³

et al. 2021

AJMC

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GaN-based optoelectronic devices have been an important development direction for semiconductors and have been applied in several fields. P-type GaN thin film implementation is the core process for optoelectronic devices, and a lot of breakthrough results have been achieved in p-GaN research. For example, Si and Mg are used as the main doping elements. However, more effective doping of GaN materials is needed in order to make GaN materials play a greater electrical and optical advantage. In this paper, we take p-GaN as the main object of study and outline the conditions that need to be satisfied for effective doping of GaN materials. Emphasizing several factors that make the quality of p-type materials of GaN a bottleneck for application development, the results achieved in p-GaN research in recent years are presented.

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Electronic structure and optical properties of Al0.25Ga0.75N with point defects and Mg-defect complexes

Yang

Guo

et al. 2018

Opt Quant Electron

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Research of acceptor impurity thermal activation in GaN: Mg epitaxial layers

Cited by 9 publications

References 6 publications

Деградация ультрафиолетовых светодиодов с квантовыми ямами InGaN/GaN, вызванная кратковременными воздействиями током

Деградация ультрафиолетовых светодиодов с квантовыми ямами InGaN/GaN, вызванная кратковременными воздействиями током

P-type Doping of Broad-band Nitride Semiconductors

Electronic structure and optical properties of Al0.25Ga0.75N with point defects and Mg-defect complexes

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